Influence of the growth temperature on the spectral dependence of the optical functions associated with thin silicon films grown by ultra-high-vacuum evaporation on optical quality fused quartz substrates

2020 ◽  
Vol 31 (16) ◽  
pp. 13186-13198
Author(s):  
Saeed Moghaddam ◽  
Farida Orapunt ◽  
Mario Noël ◽  
Joanne C. Zwinkels ◽  
Jean-Marc Baribeau ◽  
...  
Keyword(s):  
Growth Temperature ◽  
Spectral Dependence ◽  
High Vacuum ◽  
Optical Quality ◽  
Vacuum Evaporation ◽  
Silicon Films ◽  
Ultra High Vacuum ◽  
Optical Functions ◽  
Fused Quartz ◽  
Quartz Substrates

An amorphous-to-crystalline phase transition within thin silicon films grown through ultra-high-vacuum evaporation on fused quartz substrates

MRS Advances ◽  
2016 ◽  
Vol 1 (48) ◽  
pp. 3257-3262
Author(s):  
Farida Orapunt ◽  
Li-Lin Tay ◽  
David J. Lockwood ◽  
Jean-Marc Baribeau ◽  
Joanne C. Zwinkels ◽  
...  
Keyword(s):  
Phase Transition ◽  
Volume Fraction ◽  
High Vacuum ◽  
Optical Quality ◽  
Vacuum Evaporation ◽  
Silicon Films ◽  
Ultra High Vacuum ◽  
Fused Quartz ◽  
Thin Silicon ◽  
Quartz Substrates

ABSTRACTA number of thin silicon films are prepared through ultra-high-vacuum evaporation on optical quality fused quartz substrates with different growth temperatures. Through an analysis of grazing incidence X-ray diffraction results, a phase transition, from amorphous-to-crystalline, is found corresponding to increases in the growth temperature. The corresponding Raman spectra are also observed to change their form as the films go through this phase transition. Using a Raman peak decomposition process, this phase transition is then quantitatively characterized through the determination of the amount of intermediate-range order and the crystalline volume fraction for the various growth temperatures considered in this analysis. The possible device consequences of these results are then commented upon.

Amorphous Silicon Films and Superlattices Grown by Molecular Beam Epitaxy: An Optical Analysis

2002 ◽  
Vol 715 ◽  
Author(s):  
D. J. Lockwood ◽  
J.-M. Baribeau ◽  
M. Noël ◽  
J. C. Zwinkels ◽  
B. J. Fogal ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Amorphous Silicon ◽  
Molecular Beam ◽  
Crystalline Silicon ◽  
Quartz Substrate ◽  
High Vacuum ◽  
Impurity Content ◽  
Thin Layers ◽  
Silicon Films ◽  
Ultra High Vacuum

AbstractWe produce a novel form of amorphous silicon through ultra-high-vacuum molecular beam epitaxy. By depositing silicon atoms onto a fused quartz substrate at temperatures between 98 and 335°C, we obtain a silicon-based material that lacks the characteristic periodicity of crystalline silicon but nevertheless has 98% of its density. The impurity content of this material is studied through infrared and secondary ion mass spectroscopies. The primary impurity found is oxygen, with hydrogen and carbon atoms also being found at trace levels. The Raman spectra of the amorphous silicon films are measured and the results, as they relate to the presence of disorder, are interpreted. We also use this molecular beam epitaxy method to fabricate a number of amorphous silicon superlattices, comprised of thin layers of amorphous silicon separated with even thinner layers of SiO2. The optical properties of the films and superlattices are contrasted.

Influence of growth temperature on order within silicon films grown by ultrahigh-vacuum evaporation on silica

2006 ◽  
Vol 88 (12) ◽  
pp. 121920 ◽  
Author(s):  
Li-Lin Tay ◽  
David J. Lockwood ◽  
Jean-Marc Baribeau ◽  
Mario Noël ◽  
Joanne C. Zwinkels ◽  
...  
Keyword(s):  
Growth Temperature ◽  
Ultrahigh Vacuum ◽  
Vacuum Evaporation ◽  
Silicon Films

Molecular Beam Epitaxially Deposited Amorphous Silicon

2000 ◽  
Vol 609 ◽  
Author(s):  
D. J. Lockwood ◽  
J.-M. Baribeau ◽  
M. Noël ◽  
J. C. Zwinkels ◽  
B. J. Fogal ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Molecular Beam ◽  
Crystalline Silicon ◽  
Quartz Substrate ◽  
High Vacuum ◽  
Spectroscopic Properties ◽  
Spectroscopic Studies ◽  
Optical Quality ◽  
Ultra High Vacuum ◽  
Impurity Atoms

ABSTRACTWe have deposited a novel form of amorphous silicon through molecular beam epitaxy in an ultra-high vacuum. In particular, by depositing silicon atoms onto an optical quality fused quartz substrate at room temperature we have obtained a silicon-based material that lacks the periodicity that characterizes crystalline silicon but nevertheless has 98% of the density. Spectroscopic studies reveal that there are only trace amounts of hydrogen and other impurity atoms in this novel form of amorphous silicon, this contrasting dramatically with the case of conventional amorphous silicon. The Raman and optical spectroscopic properties of this form of amorphous silicon are contrasted with those of conventional amorphous silicon and sputtered amorphous silicon, and conclusions, regarding the amount of disorder, are drawn. Finally, the device implications of this novel form of amorphous silicon are discussed.

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