Oxidizable electrode induced bipolar resistive switching behavior in TE/CdZnTe/Pt structure

In this study, we have investigated influences of the thickness on the structure, surface morphology and resistive switching characteristics of CrOx thin films prepared by using DC reactive sputtering technique. The Raman and FTIR analysis revealed that multiphases including Cr2O3, CrO2, Cr8O21... phases coexist in the microstructure of CrOx film. It is noticed that the amount of stoichiometric Cr2O3 phase increased significantly as well as the surface morphology were more visible with less voids and more densed particles with larger thickness films. The Ag/CrOx/FTO devices exhibited bipolar resistive switching behavior and high reliability. The resistive switching ratio has decreased slightly with the thickness increments and was best achieved at CrOx – 100 nm devices.

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Enhanced bipolar resistive switching behavior in polar Cr-doped barium titanate thin films without electro-forming process

AIP Advances ◽

10.1063/1.5004232 ◽

2017 ◽

Vol 7 (12) ◽

pp. 125115 ◽

Cited By ~ 2

Author(s):

Atul Thakre ◽

Ashok Kumar

Keyword(s):

Thin Films ◽

Barium Titanate ◽

Resistive Switching ◽

Switching Behavior ◽

Resistive Switching Behavior ◽

Forming Process ◽

Bipolar Resistive Switching ◽

Doped Barium Titanate

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Bipolar resistive switching behavior of La0.5Sr0.5CoO3−σ films for nonvolatile memory applications

Applied Physics Letters ◽

10.1063/1.4881720 ◽

2014 ◽

Vol 104 (22) ◽

pp. 223505 ◽

Cited By ~ 21

Author(s):

Y. J. Fu ◽

F. J. Xia ◽

Y. L. Jia ◽

C. J. Jia ◽

J. Y. Li ◽

...

Keyword(s):

Resistive Switching ◽

Nonvolatile Memory ◽

Switching Behavior ◽

Resistive Switching Behavior ◽

Bipolar Resistive Switching ◽

Memory Applications

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The Resistive Switching Behavior of ZnO Films Depending on Li Dopant Concentration and Electrode Materials

Advances in Science and Technology ◽

10.4028/www.scientific.net/ast.99.75 ◽

2016 ◽

Vol 99 ◽

pp. 75-80

Author(s):

Arsen Igityan ◽

Yevgenia Kafadaryan ◽

Natella Aghamalyan ◽

Silva Petrosyan

Keyword(s):

Resistive Switching ◽

Electrode Materials ◽

Switching Behavior ◽

Zno Films ◽

Lithium Content ◽

Resistive Switching Behavior ◽

Bipolar Resistive Switching ◽

Glass Substrates ◽

Ohmic Behavior ◽

Doped Zno

Lithium (0, 1.0 and 10 at.%)-doped ZnO (LiZnO) polycrystalline thin films were deposited on Pt/SiO2, LaB6/Al2O3, Au/SiO2 and 20 at.% fluorine-doped SnO2(FTO)/glass substrates by an e-beam evaporation method. Metal/LiZnO/Metal sandwich structures were constructed by depositing different top electrodes (Ag, Al and Au) to find memristive characteristics depending on the lithium content and electrode materials. Compared with undoped and 1%Li-doped ZnO devices, the 10 at.%Li-doped ZnO (10LiZnO) device exhibits resistive switching memory. The Ag/10LiZnO/Pt and Ag/10LiZnO/LaB6 memory devices exhibit unipolar resistive switching behavior while bipolar resistive switching in Ag/10LiZnO/FTO, Au/10LiZnO/FTO and Al/10LiZnO/LaB6 structures is revealed. The dominant conduction mechanisms are explained in terms of Ohmic behavior, space charge limited current (SCLC) and Schottky emission for the URS and BRS behaviors.

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Resistive Switching Behavior of Magnesium Zirconia Nickel Nanorods

Materials ◽

10.3390/ma13122755 ◽

2020 ◽

Vol 13 (12) ◽

pp. 2755

Author(s):

Tzu-Han Su ◽

Ke-Jing Lee ◽

Li-Wen Wang ◽

Yu-Chi Chang ◽

Yeong-Her Wang

Keyword(s):

Thin Film ◽

Resistive Switching ◽

Sol Gel ◽

Switching Behavior ◽

Resistive Memory ◽

Scanning Electron Microscope Image ◽

Resistive Switching Behavior ◽

Bipolar Resistive Switching ◽

Electron Microscope Image ◽

Scanning Electron

To effectively improve the uniformity of switching behavior in resistive switching devices, this study developed magnesium zirconia nickel (MZN) nanorods grown on ITO electrodes through hydrothermal method. The field emission scanning electron microscope image shows the NR formation. Al/MZN NR/ITO structure exhibits forming-free and bipolar resistive switching behaviors. MZN NRs have relatively higher ON/OFF ratio and better uniformity compared with MZN thin film. The superior properties of MZN NRs can be attributed to its distinct geometry, which leads to the formation of straight and extensible conducting filaments along the direction of MZN NR. The results suggest the possibility of developing sol–gel NR-based resistive memory devices.

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