Effects of the thickness on resistive switching characteristics of CrOx thin films

In this study, we have investigated influences of the thickness on the structure, surface morphology and resistive switching characteristics of CrOx thin films prepared by using DC reactive sputtering technique. The Raman and FTIR analysis revealed that multiphases including Cr2O3, CrO2, Cr8O21... phases coexist in the microstructure of CrOx film. It is noticed that the amount of stoichiometric Cr2O3 phase increased significantly as well as the surface morphology were more visible with less voids and more densed particles with larger thickness films. The Ag/CrOx/FTO devices exhibited bipolar resistive switching behavior and high reliability. The resistive switching ratio has decreased slightly with the thickness increments and was best achieved at CrOx – 100 nm devices.

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Enhanced bipolar resistive switching behavior in polar Cr-doped barium titanate thin films without electro-forming process

AIP Advances ◽

10.1063/1.5004232 ◽

2017 ◽

Vol 7 (12) ◽

pp. 125115 ◽

Cited By ~ 2

Author(s):

Atul Thakre ◽

Ashok Kumar

Keyword(s):

Thin Films ◽

Barium Titanate ◽

Resistive Switching ◽

Switching Behavior ◽

Resistive Switching Behavior ◽

Forming Process ◽

Bipolar Resistive Switching ◽

Doped Barium Titanate

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Impact of interfaces on bipolar resistive switching behavior in amorphous Ge–Sb–Te thin films

Journal of Physics D Applied Physics ◽

10.1088/1361-6463/ab6bf0 ◽

2020 ◽

Vol 53 (18) ◽

pp. 184002 ◽

Cited By ~ 2

Author(s):

Hagen Bryja ◽

Christoph Grüner ◽

Jürgen W Gerlach ◽

Mario Behrens ◽

Martin Ehrhardt ◽

...

Keyword(s):

Thin Films ◽

Resistive Switching ◽

Switching Behavior ◽

Resistive Switching Behavior ◽

Bipolar Resistive Switching

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Oxidizable electrode induced bipolar resistive switching behavior in TE/CdZnTe/Pt structure

Journal of Materials Science Materials in Electronics ◽

10.1007/s10854-021-05739-3 ◽

2021 ◽

Author(s):

Aoqiu Wang ◽

Jiakui Zhang ◽

Gangqiang Zha ◽

Lingyan Xu ◽

Wanqi Jie

Keyword(s):

Resistive Switching ◽

Switching Behavior ◽

Resistive Switching Behavior ◽

Bipolar Resistive Switching

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Resistive Switching Characteristics of Li-Doped ZnO Thin Films Based on Magnetron Sputtering

Materials ◽

10.3390/ma12081282 ◽

2019 ◽

Vol 12 (8) ◽

pp. 1282 ◽

Cited By ~ 8

Author(s):

Zhao ◽

Li ◽

Ai ◽

Wen

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

Resistive Switching ◽

Photoelectron Spectroscopy ◽

Lattice Structure ◽

Zno Thin Films ◽

Bipolar Resistive Switching ◽

X Ray ◽

Doped Zno ◽

Switching Characteristics

A kind of devices Pt/Ag/ZnO:Li/Pt/Ti with high resistive switching behaviors were prepared on a SiO2/Si substrate by using magnetron sputtering method and mask technology, composed of a bottom electrode (BE) of Pt/Ti, a resistive switching layer of ZnO:Li thin film and a top electrode (TE) of Pt/Ag. To determine the crystal lattice structure and the Li-doped concentration in the resulted ZnO thin films, X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) tests were carried out. Resistive switching behaviors of the devices with different thicknesses of Li-doped ZnO thin films were studied at different set and reset voltages based on analog and digital resistive switching characteristics. At room temperature, the fabricated devices represent stable bipolar resistive switching behaviors with a low set voltage, a high switching current ratio and a long retention up to 104 s. In addition, the device can sustain an excellent endurance more than 103 cycles at an applied pulse voltage. The mechanism on how the thicknesses of the Li-doped ZnO thin films affect the resistive switching behaviors was investigated by installing conduction mechanism models. This study provides a new strategy for fabricating the resistive random access memory (ReRAM) device used in practice.

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Bipolar resistive switching characteristics of atomic layer deposited Nb2O5 thin films for nonvolatile memory application

Current Applied Physics ◽

10.1016/j.cap.2010.12.005 ◽

2011 ◽

Vol 11 (3) ◽

pp. 849-852 ◽

Cited By ~ 26

Author(s):

Lin Chen ◽

Qing-Qing Sun ◽

Jing-Jing Gu ◽

Yan Xu ◽

Shi-Jin Ding ◽

...

Keyword(s):

Thin Films ◽

Resistive Switching ◽

Nonvolatile Memory ◽

Atomic Layer ◽

Bipolar Resistive Switching ◽

Switching Characteristics

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Bipolar resistive switching behavior of La0.5Sr0.5CoO3−σ films for nonvolatile memory applications

Applied Physics Letters ◽

10.1063/1.4881720 ◽

2014 ◽

Vol 104 (22) ◽

pp. 223505 ◽

Cited By ~ 21

Author(s):

Y. J. Fu ◽

F. J. Xia ◽

Y. L. Jia ◽

C. J. Jia ◽

J. Y. Li ◽

...

Keyword(s):

Resistive Switching ◽

Nonvolatile Memory ◽

Switching Behavior ◽

Resistive Switching Behavior ◽

Bipolar Resistive Switching ◽

Memory Applications

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The Resistive Switching Behavior of ZnO Films Depending on Li Dopant Concentration and Electrode Materials

Advances in Science and Technology ◽

10.4028/www.scientific.net/ast.99.75 ◽

2016 ◽

Vol 99 ◽

pp. 75-80

Author(s):

Arsen Igityan ◽

Yevgenia Kafadaryan ◽

Natella Aghamalyan ◽

Silva Petrosyan

Keyword(s):

Resistive Switching ◽

Electrode Materials ◽

Switching Behavior ◽

Zno Films ◽

Lithium Content ◽

Resistive Switching Behavior ◽

Bipolar Resistive Switching ◽

Glass Substrates ◽

Ohmic Behavior ◽

Doped Zno

Lithium (0, 1.0 and 10 at.%)-doped ZnO (LiZnO) polycrystalline thin films were deposited on Pt/SiO2, LaB6/Al2O3, Au/SiO2 and 20 at.% fluorine-doped SnO2(FTO)/glass substrates by an e-beam evaporation method. Metal/LiZnO/Metal sandwich structures were constructed by depositing different top electrodes (Ag, Al and Au) to find memristive characteristics depending on the lithium content and electrode materials. Compared with undoped and 1%Li-doped ZnO devices, the 10 at.%Li-doped ZnO (10LiZnO) device exhibits resistive switching memory. The Ag/10LiZnO/Pt and Ag/10LiZnO/LaB6 memory devices exhibit unipolar resistive switching behavior while bipolar resistive switching in Ag/10LiZnO/FTO, Au/10LiZnO/FTO and Al/10LiZnO/LaB6 structures is revealed. The dominant conduction mechanisms are explained in terms of Ohmic behavior, space charge limited current (SCLC) and Schottky emission for the URS and BRS behaviors.

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Non-Polar and Complementary Resistive Switching Characteristics in Graphene Oxide devices with Gold Nanoparticles: Diverse Approach for Device Fabrication

Scientific Reports ◽

10.1038/s41598-019-51538-6 ◽

2019 ◽

Vol 9 (1) ◽

Cited By ~ 6

Author(s):

Geetika Khurana ◽

Nitu Kumar ◽

Manish Chhowalla ◽

James F. Scott ◽

Ram S. Katiyar

Keyword(s):

Gold Nanoparticles ◽

Graphene Oxide ◽

Resistive Switching ◽

Device Fabrication ◽

Switching Behavior ◽

Memory Devices ◽

Bipolar Resistive Switching ◽

Au Nps ◽

Conducting Path ◽

Switching Characteristics

Abstract Downscaling limitations and limited write/erase cycles in conventional charge-storage based non-volatile memories stimulate the development of emerging memory devices having enhanced performance. Resistive random-access memory (RRAM) devices are recognized as the next-generation memory devices for employment in artificial intelligence and neuromorphic computing, due to their smallest cell size, high write/erase speed and endurance. Unipolar and bipolar resistive switching characteristics in graphene oxide (GO) have been extensively studied in recent years, whereas the study of non-polar and complementary switching is scarce. Here we fabricated GO-based RRAM devices with gold nanoparticles (Au Nps). Diverse types of switching behavior are observed by changing the processing methods and device geometry. Tri-layer GO-based devices illustrated non-polar resistive switching, which is a combination of unipolar and bipolar switching. Five-layer GO-based devices depicted complementary resistive switching having the lowest current values ~12 µA; and this structure is capable of resolving the sneak path issue. Both devices show good retention and endurance performance. Au Nps in tri-layer devices assisted the conducting path, whereas in five-layer devices, Au Nps layer worked as common electrodes between co-joined cells. These GO-based devices with Au Nps comprising different configuration are vital for practical applications of emerging non-volatile resistive memories.

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Resistive Switching Behavior of Magnesium Zirconia Nickel Nanorods

Materials ◽

10.3390/ma13122755 ◽

2020 ◽

Vol 13 (12) ◽

pp. 2755

Author(s):

Tzu-Han Su ◽

Ke-Jing Lee ◽

Li-Wen Wang ◽

Yu-Chi Chang ◽

Yeong-Her Wang

Keyword(s):

Thin Film ◽

Resistive Switching ◽

Sol Gel ◽

Switching Behavior ◽

Resistive Memory ◽

Scanning Electron Microscope Image ◽

Resistive Switching Behavior ◽

Bipolar Resistive Switching ◽

Electron Microscope Image ◽

Scanning Electron

To effectively improve the uniformity of switching behavior in resistive switching devices, this study developed magnesium zirconia nickel (MZN) nanorods grown on ITO electrodes through hydrothermal method. The field emission scanning electron microscope image shows the NR formation. Al/MZN NR/ITO structure exhibits forming-free and bipolar resistive switching behaviors. MZN NRs have relatively higher ON/OFF ratio and better uniformity compared with MZN thin film. The superior properties of MZN NRs can be attributed to its distinct geometry, which leads to the formation of straight and extensible conducting filaments along the direction of MZN NR. The results suggest the possibility of developing sol–gel NR-based resistive memory devices.

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