The noise equivalent circuit model of quantum-dot lasers

2012 ◽  
Vol 33 (3) ◽  
pp. 217-226 ◽  
Author(s):  
Ashkan Horri ◽  
Seyedeh Zahra Mirmoeini ◽  
Rahim Faez
2012 ◽  
Vol 26 (21) ◽  
pp. 1250133 ◽  
Author(s):  
MOHAMMAD HOUSHMAND ◽  
MOHAMMAD H. ZANDI ◽  
SOMAYEH S. DEHKORDI ◽  
MAURICIO D. PEREZ ◽  
NIMA E. GORJI

The equivalent circuit of the p-i-n structure has been considered and developed for the quantum dot intermediate band solar cells where the nanoparticles are inserted in the active region of the diode. The admittance of the circuits are calculated consisting of frequency dependent capacitance and conductance. The presence of quantum dot layers in the active region of the diode increases the capacitance and conductance of the cell in lower frequencies. However, the number of QD cannot be increased and has an optimum.


2012 ◽  
Vol 132 (1) ◽  
pp. 1-9 ◽  
Author(s):  
Satoshi Maruyama ◽  
Muneki Nakada ◽  
Makoto Mita ◽  
Takuya Takahashi ◽  
Hiroyuki Fujita ◽  
...  

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