Improvement in the particle collection method to mitigate the mixing effect during uranium isotope analysis of environmental samples using secondary ion mass spectrometry

2020 ◽  
Vol 326 (3) ◽  
pp. 1887-1894
Author(s):  
Tae Hee Kim ◽  
Jinkyu Park ◽  
Na-Ri Lee ◽  
Chi-Gyu Lee
1985 ◽  
Vol 56 ◽  
Author(s):  
S.A. SCHWARZ ◽  
T. VENKATESAN ◽  
R. BHAT ◽  
M. KOZA ◽  
H.W. YOON ◽  
...  

AbstractThe effects of implantation and annealing on an AlAs-GaAs superlattice grown by OMCVD is examined with SIMS (secondary ion mass spectrometry). Several 180 keV 28Si+ implants, with doses ranging from 3 × 1013 to 3 × 1015 cm−2, are examined before and after a three hour 850 C anneal. While the implantation by itself causes some intermixing in the vicinity of the projected range, the 850 C thermal anneal induces significant mixing at depths well beyond the implant range. In the region of maximum implant damage, however, the post-thermal mixing effect is inhibited. Depth dependent diffusion lengths of Al and Si are derived from the SIMS data. The diffusion coefficient of Si is markedly enhanced in the mixed regions.


2016 ◽  
Vol 182 ◽  
pp. 24-39 ◽  
Author(s):  
Romain Tartèse ◽  
Marc Chaussidon ◽  
Andrey Gurenko ◽  
Frédéric Delarue ◽  
François Robert

2018 ◽  
Vol 479 ◽  
pp. 113-122 ◽  
Author(s):  
J.H.F.L. Davies ◽  
R.A. Stern ◽  
L.M. Heaman ◽  
D.E. Moser ◽  
E.L. Walton ◽  
...  

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