Resistive switching behavior in amorphous and crystalline TiO2 thin films by sol–gel process

A robust and reproducible resistance switching in iron substituted strontium titanate is reported which shows giant high to low resistance state ratio (∼105) and stable charge retention.

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Interfacial resistive switching properties of Sr2TiO4/SrTiO3 heterojunction thin films prepared via sol-gel process

Ceramics International ◽

10.1016/j.ceramint.2021.03.216 ◽

2021 ◽

Author(s):

Jun Li ◽

Xin-Gui Tang ◽

Qiu-Xiang Liu ◽

Yan-Ping Jiang ◽

Wen-Hua Li ◽

...

Keyword(s):

Thin Films ◽

Resistive Switching ◽

Sol Gel ◽

Sol Gel Process

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Effects of the thickness on resistive switching characteristics of CrOx thin films

Science and Technology Development Journal ◽

10.32508/stdj.v19i2.794 ◽

2016 ◽

Vol 19 (2) ◽

pp. 92-100

Author(s):

Ngoc Kim Pham ◽

Thang Bach Phan ◽

Vinh Cao Tran

Keyword(s):

Thin Films ◽

Surface Morphology ◽

Resistive Switching ◽

High Reliability ◽

Switching Behavior ◽

Ftir Analysis ◽

Resistive Switching Behavior ◽

Bipolar Resistive Switching ◽

Structure Surface ◽

Switching Characteristics

In this study, we have investigated influences of the thickness on the structure, surface morphology and resistive switching characteristics of CrOx thin films prepared by using DC reactive sputtering technique. The Raman and FTIR analysis revealed that multiphases including Cr2O3, CrO2, Cr8O21... phases coexist in the microstructure of CrOx film. It is noticed that the amount of stoichiometric Cr2O3 phase increased significantly as well as the surface morphology were more visible with less voids and more densed particles with larger thickness films. The Ag/CrOx/FTO devices exhibited bipolar resistive switching behavior and high reliability. The resistive switching ratio has decreased slightly with the thickness increments and was best achieved at CrOx – 100 nm devices.

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Enhanced bipolar resistive switching behavior in polar Cr-doped barium titanate thin films without electro-forming process

AIP Advances ◽

10.1063/1.5004232 ◽

2017 ◽

Vol 7 (12) ◽

pp. 125115 ◽

Cited By ~ 2

Author(s):

Atul Thakre ◽

Ashok Kumar

Keyword(s):

Thin Films ◽

Barium Titanate ◽

Resistive Switching ◽

Switching Behavior ◽

Resistive Switching Behavior ◽

Forming Process ◽

Bipolar Resistive Switching ◽

Doped Barium Titanate

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Resistive Switching Behavior of Magnesium Zirconia Nickel Nanorods

Materials ◽

10.3390/ma13122755 ◽

2020 ◽

Vol 13 (12) ◽

pp. 2755

Author(s):

Tzu-Han Su ◽

Ke-Jing Lee ◽

Li-Wen Wang ◽

Yu-Chi Chang ◽

Yeong-Her Wang

Keyword(s):

Thin Film ◽

Resistive Switching ◽

Sol Gel ◽

Switching Behavior ◽

Resistive Memory ◽

Scanning Electron Microscope Image ◽

Resistive Switching Behavior ◽

Bipolar Resistive Switching ◽

Electron Microscope Image ◽

Scanning Electron

To effectively improve the uniformity of switching behavior in resistive switching devices, this study developed magnesium zirconia nickel (MZN) nanorods grown on ITO electrodes through hydrothermal method. The field emission scanning electron microscope image shows the NR formation. Al/MZN NR/ITO structure exhibits forming-free and bipolar resistive switching behaviors. MZN NRs have relatively higher ON/OFF ratio and better uniformity compared with MZN thin film. The superior properties of MZN NRs can be attributed to its distinct geometry, which leads to the formation of straight and extensible conducting filaments along the direction of MZN NR. The results suggest the possibility of developing sol–gel NR-based resistive memory devices.

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