We investigated unipolar resistance switching in CuxO thin films. We studied on the resistive switching behavior associated with the annealing temperature of CuxO thin films and focused on HRTEM, XPS and AFM analyses. In this paper we investigated the surface and interface structures of CuxO films. Results show that there is a mount of oxygen content in the CuxO thin films which is contained in Cu (Ⅱ) oxides and Cu (Ⅰ) oxides. When annealing temperature increases the qualification of oxygen vacancies increase and more oxygen vacancies is connected with top and bottom electrode.
A robust and reproducible resistance switching in iron substituted strontium titanate is reported which shows giant high to low resistance state ratio (∼105) and stable charge retention.
Annealing Temperature Dependence on the Physicochemical Properties of Copper Oxide Thin Films