Exploring 1-butanol as a potential liquid precursor for graphene synthesis via chemical vapour deposition and enhanced catalyzed growth methodology

2019 ◽  
Vol 21 (9) ◽  
Author(s):  
Raed Abdalrheem ◽  
F. K. Yam ◽  
Abdul Razak Ibrahim ◽  
H. S. Lim ◽  
K. P. Beh ◽  
...  
Keyword(s):  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Liquid Precursor ◽  
Graphene Synthesis

scholarly journals Comparing the methods of copper substrate polishing for CVD graphene synthesis

2021 ◽  
Vol 2057 (1) ◽  
pp. 012121
Author(s):  
I A Kostogrud ◽  
E V Boyko ◽  
P E Matochkin ◽  
D V Sorokin
Keyword(s):  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Copper Substrate ◽  
Chemical Vapour ◽  
Cvd Graphene ◽  
Graphene Coating ◽  
Plasma Electrolyte ◽  
Graphene Synthesis ◽  
Cvd Synthesis

Abstract This paper presents a comparison of chemical and plasma electrolyte polishing methods for preparing a copper substrate for graphene synthesis by chemical vapour deposition. It is shown that in order to achieve the most uniform morphology of the surface of the copper substrate, it is preferable to use the electrolyte-plasma polishing method. With its help, the proportion of multilayer regions in the graphene coating obtained as a result of CVD synthesis decreases. The obtained results may serve a recommendation for creating a graphene coating with specified parameters.

scholarly journals Chemical Vapour Deposition of Graphene—Synthesis, Characterisation, and Applications: A Review

Molecules ◽  
2020 ◽  
Vol 25 (17) ◽  
pp. 3856 ◽  
Author(s):  
Maryam Saeed ◽  
Yousef Alshammari ◽  
Shereen A. Majeed ◽  
Eissa Al-Nasrallah
Keyword(s):  
Chemical Vapour Deposition ◽  
Large Scale ◽  
Vapour Deposition ◽  
Electronic Devices ◽  
Graphene Film ◽  
Chemical Vapour ◽  
Process Conditions ◽  
Graphene Synthesis ◽  
Grown Graphene

Graphene as the 2D material with extraordinary properties has attracted the interest of research communities to master the synthesis of this remarkable material at a large scale without sacrificing the quality. Although Top-Down and Bottom-Up approaches produce graphene of different quality, chemical vapour deposition (CVD) stands as the most promising technique. This review details the leading CVD methods for graphene growth, including hot-wall, cold-wall and plasma-enhanced CVD. The role of process conditions and growth substrates on the nucleation and growth of graphene film are thoroughly discussed. The essential characterisation techniques in the study of CVD-grown graphene are reported, highlighting the characteristics of a sample which can be extracted from those techniques. This review also offers a brief overview of the applications to which CVD-grown graphene is well-suited, drawing particular attention to its potential in the sectors of energy and electronic devices.

Low-pressure chemical vapour deposition of mullite coatings in a cold-wall reactor

1999 ◽  
Vol 09 (PR8) ◽  
pp. Pr8-395-Pr8-402 ◽  
Author(s):  
B. Armas ◽  
M. de Icaza Herrera ◽  
C. Combescure ◽  
F. Sibieude ◽  
D. Thenegal
Keyword(s):  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Low Pressure ◽  
Cold Wall ◽  
Pressure Chemical ◽  
Mullite Coatings

Thermodynamical and experimental conditions of hafnium carbide chemical vapour deposition

1999 ◽  
Vol 09 (PR8) ◽  
pp. Pr8-373-Pr8-380 ◽  
Author(s):  
P. Sourdiaucourt ◽  
A. Derré ◽  
P. Delhaès ◽  
P. David
Keyword(s):  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Hafnium Carbide ◽  
Experimental Conditions

Reduction of carbon impurities in aluminium nitride from time-resolved chemical vapour deposition using trimethylaluminum

2020 ◽  
Author(s):  
Polla Rouf ◽  
Pitsiri Sukkaew ◽  
Lars Ojamäe ◽  
Henrik Pedersen
Keyword(s):  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Aluminium Nitride ◽  
Methyl Groups ◽  
Time Resolved ◽  
Thermally Induced ◽  
Light Emitting ◽  
Carbon Impurities ◽  
Wide Range

<p>Aluminium nitride (AlN) is a semiconductor with a wide range of applications from light emitting diodes to high frequency transistors. Electronic grade AlN is routinely deposited at 1000 °C by chemical vapour deposition (CVD) using trimethylaluminium (TMA) and NH<sub>3</sub> while low temperature CVD routes to high quality AlN are scarce and suffer from high levels of carbon impurities in the film. We report on an ALD-like CVD approach with time-resolved precursor supply where thermally induced desorption of methyl groups from the AlN surface is enhanced by the addition of an extra pulse, H<sub>2</sub>, N<sub>2</sub> or Ar between the TMA and NH<sub>3</sub> pulses. The enhanced desorption allowed deposition of AlN films with carbon content of 1 at. % at 480 °C. Kinetic- and quantum chemical modelling suggest that the extra pulse between TMA and NH<sub>3</sub> prevents re-adsorption of desorbing methyl groups terminating the AlN surface after the TMA pulse. </p>

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