Gas-Phase Nucleation of Diamond Clusters upon a Sharp Rise in Temperature under Conditions of CVD Synthesis

It is shown that the predominant nucleation of diamond nuclei (instead of graphite ones) in plasma or hot-filament assisted CVD technology is due to a sharp increase in the temperature of the region of the initial gas mixture’s motion. The nucleation of diamond nuclei then occurs immediately in the gas phase. The reason for such predominant nucleation is high oversaturation by small hydrocarbon fragments in the gas mixture, due to a rapid change in temperature and substantial differences between the desorption of such fragments from the surfaces of nuclei and the oxidation of nuclei. A way is described of synthesizing massive diamonds without the use of high pressures and CVD technology in its traditional form.

Comparing the methods of copper substrate polishing for CVD graphene synthesis

This paper presents a comparison of chemical and plasma electrolyte polishing methods for preparing a copper substrate for graphene synthesis by chemical vapour deposition. It is shown that in order to achieve the most uniform morphology of the surface of the copper substrate, it is preferable to use the electrolyte-plasma polishing method. With its help, the proportion of multilayer regions in the graphene coating obtained as a result of CVD synthesis decreases. The obtained results may serve a recommendation for creating a graphene coating with specified parameters.