Pile-up correction in characterizing single-photon avalanche diodes of high dark count rate

2018 ◽  
Vol 50 (6) ◽  
Author(s):  
Xun Ding ◽  
Kai Zang ◽  
Yueyang Fei ◽  
Tianzhe Zheng ◽  
Tao Su ◽  
...  
Keyword(s):  
Count Rate ◽  
Single Photon ◽  
Dark Count ◽  
Dark Count Rate ◽  
Avalanche Diodes ◽  
Pile Up ◽  
Single Photon Avalanche Diodes

Dark Count Rate Modeling in Single-Photon Avalanche Diodes for Space LIDAR Applications

2019 ◽  
Author(s):  
Aymeric Panglosse ◽  
Philippe Martin-Gonthier ◽  
Olivier Marcelot ◽  
Cedric Virmontois ◽  
Olivier Saint-Pe ◽  
...  
Keyword(s):  
Count Rate ◽  
Single Photon ◽  
Dark Count ◽  
Dark Count Rate ◽  
Avalanche Diodes ◽  
Single Photon Avalanche Diodes

Quenching Circuit of Avalanche Diodes for Single Photon Detection

2013 ◽  
Vol 437 ◽  
pp. 1073-1076
Author(s):  
Qing Yao Xu ◽  
Hong Pei Wang ◽  
Xiang Chao Hu ◽  
Hai Qian ◽  
Ying Cheng Peng ◽  
...  
Keyword(s):  
Count Rate ◽  
Single Photon ◽  
Single Photon Detection ◽  
Dark Count ◽  
Photon Detection ◽  
Dark Count Rate ◽  
Avalanche Diodes ◽  
Free Running ◽  
Single Photon Avalanche Diodes ◽  
Running Mode

To reduce the afterpulsing in single photon detection based on avalanche diodes, an advanced passive quenching circuit for operation in free-running mode is developed. The measurement setup is designed. The dark count rate (DCR) and afterpulsing of Single photon avalanche diodes (SPADs) are measured. The results show that the new passive quenching circuit has a better afterpulsing performance compared to traditional circuits.

scholarly journals Dark Count Rate Modeling in Single-Photon Avalanche Diodes

2020 ◽  
Vol 67 (5) ◽  
pp. 1507-1515
Author(s):  
Aymeric Panglosse ◽  
Philippe Martin-Gonthier ◽  
Olivier Marcelot ◽  
Cedric Virmontois ◽  
Olivier Saint-Pe ◽  
...  
Keyword(s):  
Count Rate ◽  
Single Photon ◽  
Dark Count ◽  
Dark Count Rate ◽  
Avalanche Diodes ◽  
Single Photon Avalanche Diodes

Dark Count Rate in Single-Photon Avalanche Diodes: Characterization and Modeling study

2021 ◽  
Author(s):  
Mathieu Sicre ◽  
Megan Agnew ◽  
Christel Buj ◽  
Jean Coignus ◽  
Dominique Golanski ◽  
...  
Keyword(s):  
Count Rate ◽  
Single Photon ◽  
Dark Count ◽  
Dark Count Rate ◽  
Avalanche Diodes ◽  
Modeling Study ◽  
Single Photon Avalanche Diodes

scholarly journals Design of a Real-Time Breakdown Voltage and On-Chip Temperature Monitoring System for Single Photon Avalanche Diodes

Electronics ◽  
2020 ◽  
Vol 10 (1) ◽  
pp. 25
Author(s):  
Shijie Deng ◽  
Alan P. Morrison ◽  
Yong Guo ◽  
Chuanxin Teng ◽  
Ming Chen ◽  
...  
Keyword(s):  
Real Time ◽  
Breakdown Voltage ◽  
Count Rate ◽  
Single Photon ◽  
Photon Counting ◽  
Temperature Monitoring ◽  
Dark Count ◽  
Chip Temperature ◽  
Avalanche Diodes ◽  
On Chip

The design and implementation of a real-time breakdown voltage and on-chip temperature monitoring system for single photon avalanche diodes (SPADs) is described in this work. In the system, an on-chip shaded (active area of the detector covered by a metal layer) SPAD is used to provide a dark count rate for the breakdown voltage and temperature calculation. A bias circuit was designed to provide a bias voltage scanning for the shaded SPAD. A microcontroller records the pulses from the anode of the shaded SPAD and calculates its real-time dark count rate. An algorithm was developed for the microcontroller to calculate the SPAD’s breakdown voltage and the on-chip temperature in real time. Experimental results show that the system is capable of measuring the SPAD’s breakdown voltage with a mismatch of less than 1.2%. Results also show that the system can provide real-time on-chip temperature monitoring for the range of −10 to 50 °C with errors of less than 1.7 °C. The system proposed can be used for the real-time SPAD’s breakdown voltage and temperature estimation for dual-SPADs or SPAD arrays chip where identical detectors are fabricated on the same chip and one or more dummy SPADs are shaded. With the breakdown voltage and the on-chip temperature monitoring, intelligent control logic can be developed to optimize the performance of the SPAD-based photon counting system by adjusting the parameters such as excess bias voltage and dead-time. This is particularly useful for SPAD photon counting systems used in complex working environments such as the applications in 3D LIDAR imaging for geodesy, geology, geomorphology, forestry, atmospheric physics and autonomous vehicles.

Design, Fabrication, and Verification of Blue-Extended Single-Photon Avalanche Diode with Low Dark Count Rate and High Photon Detection Efficiency

2021 ◽  
Vol 16 (4) ◽  
pp. 546-551
Author(s):  
Mei-Ling Zeng ◽  
Yang Wang ◽  
Xiang-Liang Jin ◽  
Yan Peng ◽  
Jun Luo
Keyword(s):  
Bias Voltage ◽  
Spectral Range ◽  
Count Rate ◽  
Detection Efficiency ◽  
Single Photon ◽  
Dark Count ◽  
Photon Detection ◽  
Avalanche Diode ◽  
Dark Count Rate ◽  
Photon Detection Efficiency

Single-photon avalanche diodes (SPADs) can detect extremely weak optical signals and are mostly used in single-photon imaging, quantum communication, medical detection, and other fields. In this paper, a low dark count rate (DCR) single-photon avalanche diode device is designed based on the 180 nm standard BCD process. The device has a good response in the 450~750 nm spectral range. The active area of the device adopts a P+/N-Well structure with a diameter of 20 µm. The low-doped N-Well increases the thickness of the depletion region and can effectively improve the detection sensitivity; the P-Well acts as a guard ring to prevent premature breakdown of the PN junction edge; the isolation effect of the deep N-Well reduces the noise coupling of the substrate. Use the TCAD simulation tool to verify the SPAD’s basic principles. The experimental test results show that the avalanche breakdown voltage of the device is 11.7 V. The dark count rate is only 123 Hz when the over-bias voltage is 1 V, and the peak photon detection efficiency (PDE) reaches 37.5% at the wavelength of 500 nm under the 0.5 V over-bias voltage. PDE exceeds 30% in the range of 460~640 nm spectral range, which has a good response in the blue band. The SPAD device provides certain design ideas for the research of fluorescence detectors.

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