Spectroscopic ellipsometry study of non-hydrogenated fully amorphous silicon films deposited by room-temperature radio-frequency magnetron sputtering on glass: Influence of the argon pressure

2020 ◽  
Vol 547 ◽  
pp. 120305 ◽  
Author(s):  
E. Márquez ◽  
E. Blanco ◽  
C. García-Vázquez ◽  
J.M. Díaz ◽  
E. Saugar
Keyword(s):  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Amorphous Silicon ◽  
Spectroscopic Ellipsometry ◽  
Room Temperature ◽  
Radio Frequency Magnetron ◽  
Silicon Films ◽  
Argon Pressure ◽  
Radio Frequency Magnetron Sputtering

Detection of an ordered-structure fraction in amorphous silicon

2016 ◽  
Vol 49 (2) ◽  
pp. 528-532 ◽  
Author(s):  
Xiao-Dong Wang ◽  
Bo Chen ◽  
Hai-Feng Wang ◽  
Xin Zheng ◽  
Shi-Jie Liu ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Amorphous Silicon ◽  
Spectroscopic Ellipsometry ◽  
Optical Constants ◽  
Ordered Structure ◽  
Radio Frequency Magnetron Sputtering ◽  
Medium Range Order ◽  
Medium Range ◽  
Si Films

Amorphous silicon (a-Si) films were prepared by radio frequency magnetron sputtering. Spectroscopic ellipsometry (SE) was utilized to detect an ordered-structure fraction in a-Si. The SE analysis of a-Si films with different thicknesses (7.0–140.0 nm) demonstrates that no more than 2.81% of medium-range order exists in the samples, and interestingly, there is a thickness dependence of optical constants for a-Si in the range of 1.5–5.0 eV.

Preparation and Characterization of 70TeO2-30WO3 Glass Thin Films by Radio-Frequency Magnetron Sputtering Method

2007 ◽  
Vol 124-126 ◽  
pp. 487-490 ◽  
Author(s):  
Jin Hyeok Kim ◽  
Ki Young Yoo ◽  
Sang Hoon Shin ◽  
Sun Hyun Youn ◽  
Jong Ha Moon
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Deposition Rate ◽  
Room Temperature ◽  
Processing Parameters ◽  
Radio Frequency Magnetron ◽  
Refractive Indices ◽  
Bandgap Energy ◽  
Radio Frequency Magnetron Sputtering

70TeO2-30WO3 glass thin films were fabricated using radio-frequency magnetron sputtering method and the effects of processing parameters on the growth rate, the surface morphologies, the crystallinity, and refractive indices of thin films have been investigated using AFM, XRD, SEM, and UV-Vis-IR spectrometer. Amorphous glass thin films with surface roughness of 4~6 nm could be formed only at room temperature and crystalline WO3 phase was observed in all the films prepared at above the room temperature. The deposition rate strongly depended on the processing parameters. It increased with increasing rf power and with decreasing processing pressure. Especially, it changed remarkably as varying the Ar/O2 gas flow ratio from 40sccm/0sccm to 0sccm/40sccm. When the films were formed in pure Ar atmosphere it shows a deposition rate of ~0.2 μm/h, whereas ~1.5 μm/h when the films was formed in pure O2 atmosphere. The refractive indices of TeO2-WO3glass thin films could be measured to be about 1.849~2.165 depending on the wavelength in the range of 500-1100 nm and the bandgap energy of glass thin film was ~3.34 eV.

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