Surface Morphology-Dependent Room-Temperature LaFeO3 Nanostructure Thin Films as Selective NO2 Gas Sensor Prepared by Radio Frequency Magnetron Sputtering

2014 ◽  
Vol 6 (16) ◽  
pp. 13917-13927 ◽  
Author(s):  
S. Thirumalairajan ◽  
K. Girija ◽  
Valmor R. Mastelaro ◽  
N. Ponpandian
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Gas Sensor ◽  
Room Temperature ◽  
Radio Frequency Magnetron ◽  
Radio Frequency Magnetron Sputtering ◽  
No2 Gas Sensor

Preparation and Characterization of 70TeO2-30WO3 Glass Thin Films by Radio-Frequency Magnetron Sputtering Method

2007 ◽  
Vol 124-126 ◽  
pp. 487-490 ◽  
Author(s):  
Jin Hyeok Kim ◽  
Ki Young Yoo ◽  
Sang Hoon Shin ◽  
Sun Hyun Youn ◽  
Jong Ha Moon
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Deposition Rate ◽  
Room Temperature ◽  
Processing Parameters ◽  
Radio Frequency Magnetron ◽  
Refractive Indices ◽  
Bandgap Energy ◽  
Radio Frequency Magnetron Sputtering

70TeO2-30WO3 glass thin films were fabricated using radio-frequency magnetron sputtering method and the effects of processing parameters on the growth rate, the surface morphologies, the crystallinity, and refractive indices of thin films have been investigated using AFM, XRD, SEM, and UV-Vis-IR spectrometer. Amorphous glass thin films with surface roughness of 4~6 nm could be formed only at room temperature and crystalline WO3 phase was observed in all the films prepared at above the room temperature. The deposition rate strongly depended on the processing parameters. It increased with increasing rf power and with decreasing processing pressure. Especially, it changed remarkably as varying the Ar/O2 gas flow ratio from 40sccm/0sccm to 0sccm/40sccm. When the films were formed in pure Ar atmosphere it shows a deposition rate of ~0.2 μm/h, whereas ~1.5 μm/h when the films was formed in pure O2 atmosphere. The refractive indices of TeO2-WO3glass thin films could be measured to be about 1.849~2.165 depending on the wavelength in the range of 500-1100 nm and the bandgap energy of glass thin film was ~3.34 eV.

Effects of Sputtering Pressure on Cu3N Thin Films by Reactive Radio Frequency Magnetron Sputtering

2015 ◽  
Vol 1105 ◽  
pp. 74-77 ◽  
Author(s):  
Xiao Lin Ji ◽  
Hai Dong Ju ◽  
Tao Yu Zou ◽  
Jin Long Luo ◽  
Kun Quan Hong ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Surface Morphology ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Band Gap ◽  
Optical Band Gap ◽  
Radio Frequency Magnetron ◽  
Radio Frequency Magnetron Sputtering ◽  
Sputtering Pressure

Copper nitride thin films were prepared by reactive radio frequency magnetron sputtering at different sputtering pressures with fixed nitrogen to argon ratio. The influences of sputtering pressure on the structure, optical band gap, and surface morphology of films were investigated. The results show that the preferential orientation of polycrystalline Cu3N thin films changes from [111] to [100] when the sputtering pressure increases. Meanwhile, the optical band gap (Eg) of Cu3N thin films increases with the sputtering pressure. The surface morphology of Cu3N thin film deposited at high sputtering pressure becomes smoother than that of Cu3N thin film deposited at low sputtering pressure.

Surface Morphology and Interface Reaction of Cu/SiO2/Si (111) Systems Prepared by Radio Frequency Magnetron Sputtering

2012 ◽  
Vol 487 ◽  
pp. 697-700
Author(s):  
Bo Cao ◽  
Tong Rui Yang ◽  
Gong Ping Li
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Interface Reaction ◽  
Radio Frequency Magnetron ◽  
Silicide Phase ◽  
Deposition Condition ◽  
Radio Frequency Magnetron Sputtering ◽  
Silicon Oxide Layer

The Cu thin films were prepared at room temperature by radio frequency magnetron sputtering on p-type Si (111) substrates. The surface morphology and interface reaction of Cu thin films were studied at different deposition condition by scanning electron microscopy (SEM) and X-ray diffraction (XRD). The results show that the existence of the native silicon oxide layer suppresses the interdiffusion and interface reaction of Cu and Si. The formation of the copper-silicide phase is observed by XRD when the annealing temperature arrives at 450 °C.

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