Preparation of tantalum oxynitride thin film photocatalysts by reactive magnetron sputtering deposition under high substrate temperature

2017 ◽  
Vol 43 (9) ◽  
pp. 5123-5136 ◽  
Author(s):  
Yu Horiuchi ◽  
Shinya Mine ◽  
Madoka Moriyasu ◽  
Masakazu Anpo ◽  
Tae-Ho Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
High Substrate Temperature ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Sputtering Deposition ◽  
High Substrate

High Substrate Temperature a-Si:H Grown by DC Reactive Magnetron Sputtering

1993 ◽  
Vol 297 ◽  
Author(s):  
Y. H. Liang ◽  
N. Maley ◽  
J. R. Abelson
Keyword(s):  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Light Exposure ◽  
State Density ◽  
High Substrate Temperature ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
High Substrate ◽  
Partial Pressures ◽  
Dc Reactive Magnetron Sputtering

We report the electronic properties, stability and microstructure of a-Si:H films grown at very high substrate temperature (Ts = 320∼425°C) by DC reactive magnetron sputtering (RMS). The partial pressures of Ar and H2 are fixed at 1.5 and 0.8 mT, respectively, during the deposition. The initial defect state density, determined by the constant photocurrent method (CPM), varies from 2∼5×l015 cm−3with H content changing from 15–10 at.% as Ts increases from 320–375°C. For 100 hrs white light exposure at lW/cm2, a heavily degraded state was obtained with mid–gap state density in the range 2-3×l016cm−3 over this Ts range. These are among the lowest values reported for intrinsic a–Si:H.

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