scholarly journals Progressive nucleation mechanism for the growth behavior of items and its application to cumulative papers and citations of individual authors

2012 ◽  
Vol 92 (3) ◽  
pp. 575-591 ◽  
Author(s):  
Keshra Sangwal
Keyword(s):  
Nucleation Mechanism ◽  
Growth Behavior ◽  
Progressive Nucleation

Preparation, optimization and evolution of the kinetic mechanism of an Fe-MIL-88A metal–organic framework

CrystEngComm ◽  
2019 ◽  
Vol 21 (3) ◽  
pp. 544-553 ◽  
Author(s):  
Elham Bagherzadeh ◽  
Seyed Mojtaba Zebarjad ◽  
Hamid Reza Madaah Hosseini ◽  
Pierre Chagnon
Keyword(s):  
Morphological Changes ◽  
Metal Organic Framework ◽  
Kinetic Mechanism ◽  
Nucleation Mechanism ◽  
Growth Behavior ◽  
Kinetics Of Crystallization ◽  
Metal Organic ◽  
Statistical Studies ◽  
Kinetics Of ◽  
Organic Framework

Investigating the kinetics of crystallization, growth behavior and morphological changes through statistical studies of Fe-MIL-88A suggested an autocatalytic nucleation mechanism.

A progressive nucleation mechanism enables stable zinc stripping–plating behavior

2021 ◽  
Vol 14 (10) ◽  
pp. 5563-5571
Author(s):  
Yihu Li ◽  
Pengfei Wu ◽  
Wei Zhong ◽  
Chunlin Xie ◽  
Yanling Xie ◽  
...  
Keyword(s):  
Nucleation Mechanism ◽  
Preferential Adsorption ◽  
Instantaneous Nucleation ◽  
Progressive Nucleation

The preferential adsorption of cation additives enables the transformation of a zinc nucleation mechanism from instantaneous nucleation to progressive nucleation, which ultimately realizes a stable zinc stripping/plating behavior.

Kinetics of Ni-Nano Cr2O3 Composite Coating during Early Electro-Crystallization Processes

2013 ◽  
Vol 785-786 ◽  
pp. 938-943 ◽  
Author(s):  
Li Bin Yu ◽  
Qi Jun Zhong ◽  
Yi Xiao ◽  
Jian Feng Gu ◽  
Qing Dong Zhong
Keyword(s):  
Composite Coating ◽  
Composite System ◽  
Nucleation Mechanism ◽  
Crystal Nucleation ◽  
Nucleation Process ◽  
Nucleation Kinetics ◽  
Instantaneous Nucleation ◽  
Nucleation Model ◽  
Progressive Nucleation ◽  
Kinetics Of

Nucleation kinetics of Ni-nanoCr2O3composite coating during early electro-crystallization was investigated. The results showed that, the early electro-crystallization processes of Ni-nanoCr2O3composite coating and pure Ni coating followed a Scharifker-Hill nucleation/growth mechanism. At the low potential, the nucleation process of pure Ni and Ni-Cr2O3composite system may approach to the progressive nucleation model; With the overpotential increasing, the nucleation model of Pure Ni and Ni-Cr2O3composite system converts into the instantaneous nucleation mechanism controlled; at the same overpotential, Cr2O3powder promotes the electro-crystallization nucleation of Ni. But at high negative potential, Cr2O3powder in composite system promotes the electro-crystal nucleation of Ni weakly; the nanoCr2O3powder added reduces the current efficiency in the nucleation process of Ni.

scholarly journals Comparison of selected mathematical functions for the analysis of growth behavior of items and physical interpretation of AvramiWeibull function

2021 ◽  
Vol 21 ◽  
pp. 259-278
Author(s):  
Keshra Sangwal
Keyword(s):  
Growth Behavior ◽  
Supersaturated Solution ◽  
Weibull Function ◽  
Cumulative Number ◽  
Mathematical Functions ◽  
Or Groups ◽  
Different Types ◽  
Solid Phases ◽  
Progressive Nucleation ◽  
Better Than

Abstract Empirical data of sigmoidal-shaped y(t) growth behavior of different types of items, such as papers and citations earned by individual and all successively published papers of selected top-cited authors, germination of tomato seeds and three different bacteria, are analyzed and compared by Avrami-Weibull, Verhulst (logistic) and Gompertz functions. It was found that: (1) Avrami-Weibull function describes different types of the data better than Gompertz and Verhulst funtions, and (2), in comparison with Verhulst and Gompertz functions, Avrami-Weibull function, expressed in the form: y(t)/ymax = 1-exp[(t/Q)q] (where ymax is the maximum value of y(t) when t ® ¥, and Q and q are constants), is equally very versatile in explaining the generation rate dy(t)/dt of items in terms of its parameters Q and q. Using the basic concepts involved in the derivation of Avrami-Weibull function for overall crystallization from melt and supersaturated solution, the growth behavior of cumulative number y(t) of items produced at time t by individual (simple) sources and collectives or groups of simple sources (i.e. complex or composite sources) is presented. Comparison of the process of receiving of citations by papers with the processes of occurrence of chemical reactions and crystallization of solid phases from melts and supersaturated solutions shows that this process is similar to that of overall crystallization of solid phases from melts and solutions. Analysis of growth of citations using Avrami-Weibull function to individual papers published by different authors shows that 1 < q < 4 for most cases. This suggests that the process of citations to individual articles is mainly determined by progressive nucleation mode involving both diffusion and integration of published knowledge.  

Transmission Electron Microscopy characterization of epitaxial III-V semiconductor thin films grown on Si(100) by ion-assisted deposition

1990 ◽  
Vol 48 (4) ◽  
pp. 686-687
Author(s):  
L. Hultman ◽  
C.-H. Choi ◽  
R. Kaspi ◽  
R. Ai ◽  
S.A. Barnett
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Ion Irradiation ◽  
High Energy ◽  
Nucleation Mechanism ◽  
Layer By Layer ◽  
Extended Defect ◽  
Island Formation ◽  
Si Substrates ◽  
Transmission Electron

III-V semiconductor films nucleate by the Stranski-Krastanov (SK) mechanism on Si substrates. Many of the extended defects present in the films are believed to result from the island formation and coalescence stage of SK growth. We have recently shown that low (-30 eV) energy, high flux (4 ions per deposited atom), Ar ion irradiation during nucleation of III-V semiconductors on Si substrates prolongs the 1ayer-by-layer stage of SK nucleation, leading to a decrease in extended defect densities. Furthermore, the epitaxial temperature was reduced by >100°C due to ion irradiation. The effect of ion bombardment on the nucleation mechanism was explained as being due to ion-induced dissociation of three-dimensional islands and ion-enhanced surface diffusion.For the case of InAs grown at 380°C on Si(100) (11% lattice mismatch), where island formation is expected after ≤ 1 monolayer (ML) during molecular beam epitaxy (MBE), in-situ reflection high-energy electron diffraction (RHEED) showed that 28 eV Ar ion irradiation prolonged the layer-by-layer stage of SK nucleation up to 10 ML. Otherion energies maintained layer-by-layer growth to lesser thicknesses. The ion-induced change in nucleation mechanism resulted in smoother surfaces and improved the crystalline perfection of thicker films as shown by transmission electron microscopy and X-ray rocking curve studies.

INDALLOY 160-190

Alloy Digest ◽  
1984 ◽  
Vol 33 (1) ◽  
Keyword(s):  
Physical Properties ◽  
Tensile Properties ◽  
Precision Measurement ◽  
Heat Treating ◽  
Spray Forming ◽  
Growth Behavior ◽  
Temperature Range

Abstract INDALLOY 160-190 is a bismth-base low-melting alloy that melts through th temperature range 160-190 F. It shrinks immediately upon solidification, grows back to zero in about one hour and then shows additional growth. This shrinkage-growth behavior makes it an ideal alloy for proof casting and precision measurement of internal dimensions. This alloy originally was developed for use by children for casting soldiers and other small objects. It performs best among the low-melting alloys for spraying in the spray forming of masks and molds and in metallizing. This datasheet provides information on composition, physical properties, hardness, and tensile properties. It also includes information on casting, heat treating, machining, and joining. Filing Code: Bi-34. Producer or source: Indium Corporation of America.

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