Performance Analysis in Terms of Bit Error Rate Over Fluctuating Two-Ray (FTR) Fading Channels

Author(s):  
Laishram Mona Devi ◽  
Aheibam Dinamani Singh
2020 ◽  
Author(s):  
Laishram Mona Devi ◽  
Aheibam Dinamani Singh

2020 ◽  
Vol 0 (0) ◽  
Author(s):  
Jesuwanth Sugesh Ramesh Gabriel ◽  
Sivasubramanian Arunagiri

AbstractIn this paper, we report the performance of a carrier depletion Silicon PIN phase shifter with over layer of 130 nm. It is observed that an optimum intrinsic gap of 250 nm for a device length of 5 mm at 2 V, resulted in Extinction Ratio (ER) of 23.41 dB and Bit Error Rate (BER) of 1.00 × 10−7 is obtained for 50 Gbps. The phase shifter is also designed for length 2 mm with an intrinsic gap of 100 nm at an operating voltage <4 V. The study also reveals that the proposed design for Mach-Zehnder modulator operating at a data rate of 100 Gbps for the concentration of P = 7 × 1017 cm−3 and N = 5 × 1017 cm−3 gives better BER and phase performance. The proposed design was also analysed in an intra-data centre communication setup of fibre length 15 km.


2011 ◽  
Vol 23 (4) ◽  
pp. 269-271 ◽  
Author(s):  
Jaedon Park ◽  
Eunju Lee ◽  
Giwan Yoon

Sign in / Sign up

Export Citation Format

Share Document