scholarly journals Two-carrier transport in SrMnBi2 thin films

2017 ◽  
Vol 12 (3) ◽  
Author(s):  
Xiao Yan ◽  
Cheng Zhang ◽  
Shan-Shan Liu ◽  
Yan-Wen Liu ◽  
David Wei Zhang ◽  
...  
Keyword(s):  
RSC Advances ◽  
2016 ◽  
Vol 6 (84) ◽  
pp. 81394-81399 ◽  
Author(s):  
Juran Kim ◽  
Gee Yeong Kim ◽  
Hankyoul Moon ◽  
Seokhyun Yoon ◽  
Il Wan Seo ◽  
...  

400 °C is optimal sulfurization temperature for pure pyrite FeS2 thin film, expecting better performance as light-absorber.


2013 ◽  
Vol 178 (9) ◽  
pp. 568-573
Author(s):  
Steve Reynolds ◽  
Rudi Brüggemann ◽  
Björn Grootoonk ◽  
Vlad Smirnov

2009 ◽  
Vol 8 (12) ◽  
pp. 952-958 ◽  
Author(s):  
Jonathan Rivnay ◽  
Leslie H. Jimison ◽  
John E. Northrup ◽  
Michael F. Toney ◽  
Rodrigo Noriega ◽  
...  

2009 ◽  
Vol 105 (12) ◽  
pp. 124518 ◽  
Author(s):  
Xin Zhou ◽  
Ken Uchida ◽  
Hiroshi Mizuta ◽  
Shunri Oda

2016 ◽  
Vol 9 (6) ◽  
pp. 065801 ◽  
Author(s):  
Rajendra Dahal ◽  
Kawser Ahmed ◽  
Jia Woei Wu ◽  
Adam Weltz ◽  
James Jian-Qiang Lu ◽  
...  

Author(s):  
Yukinori Morita ◽  
Hiroyuki OTA ◽  
Shinji MIGITA

Abstract Carrier transport properties of ferroelectric Hf0.5Zr0.5O2 (HZO) thin films have been investigated on metal-ferroelectric-metal (MFM) capacitor in the first current flow of ferroelectric poling treatment. In current–voltage (I–V) measurement of MFM capacitor, a kink or discontinuity point of derivative in I–V characteristic appears, and after the cyclic voltage sweep this kink disappears. This phenomenon is different from the ferroelectric instabilities after several thousand or million voltage cycle applies reported as the wake-up and fatigue. From the analysis using Poole-Frenkel plot of I–V characteristics, it is suggested that irreversible trap generation by electric field apply occurs in poling treatment.


2019 ◽  
Vol 94 (10) ◽  
pp. 1527-1535 ◽  
Author(s):  
S. Santhosh Kumar Jacob ◽  
I. Kulandaisamy ◽  
S. Valanarasu ◽  
A. M. S. Arulanantham ◽  
V. Ganesh ◽  
...  

2020 ◽  
Vol 234 (4) ◽  
pp. 699-717
Author(s):  
James Hirst ◽  
Sönke Müller ◽  
Daniel Peeters ◽  
Alexander Sadlo ◽  
Lukas Mai ◽  
...  

AbstractThe temporal evolution of photogenerated carriers in CuWO4, CuO and WO3 thin films deposited via a direct chemical vapor deposition approach was studied using time-resolved microwave conductivity and terahertz spectroscopy to obtain the photocarrier lifetime, mobility and diffusion length. The carrier transport properties of the films prepared by varying the copper-to-tungsten stoichiometry were compared and the results related to the performance of the compositions built into respective photoelectrochemical cells. Superior carrier mobility was observed for CuWO4 under frontside illumination.


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