Anomalous change of carrier transport property of ferroelectric Hf0.5Zr0.5O2 thin films in the first poling treatment

Author(s):  
Yukinori Morita ◽  
Hiroyuki OTA ◽  
Shinji MIGITA

Abstract Carrier transport properties of ferroelectric Hf0.5Zr0.5O2 (HZO) thin films have been investigated on metal-ferroelectric-metal (MFM) capacitor in the first current flow of ferroelectric poling treatment. In current–voltage (I–V) measurement of MFM capacitor, a kink or discontinuity point of derivative in I–V characteristic appears, and after the cyclic voltage sweep this kink disappears. This phenomenon is different from the ferroelectric instabilities after several thousand or million voltage cycle applies reported as the wake-up and fatigue. From the analysis using Poole-Frenkel plot of I–V characteristics, it is suggested that irreversible trap generation by electric field apply occurs in poling treatment.

2008 ◽  
Vol 254 (19) ◽  
pp. 6248-6251 ◽  
Author(s):  
S. Sakamoto ◽  
T. Oshio ◽  
A. Ashida ◽  
T. Yoshimura ◽  
N. Fujimura

2020 ◽  
Vol 234 (4) ◽  
pp. 699-717
Author(s):  
James Hirst ◽  
Sönke Müller ◽  
Daniel Peeters ◽  
Alexander Sadlo ◽  
Lukas Mai ◽  
...  

AbstractThe temporal evolution of photogenerated carriers in CuWO4, CuO and WO3 thin films deposited via a direct chemical vapor deposition approach was studied using time-resolved microwave conductivity and terahertz spectroscopy to obtain the photocarrier lifetime, mobility and diffusion length. The carrier transport properties of the films prepared by varying the copper-to-tungsten stoichiometry were compared and the results related to the performance of the compositions built into respective photoelectrochemical cells. Superior carrier mobility was observed for CuWO4 under frontside illumination.


Nano Select ◽  
2020 ◽  
Vol 1 (3) ◽  
pp. 334-345
Author(s):  
Akihiro Kohara ◽  
Tsukasa Hasegawa ◽  
Minoru Ashizawa ◽  
Yoshihiro Hayashi ◽  
Susumu Kawauchi ◽  
...  

2009 ◽  
Vol 149 (39-40) ◽  
pp. 1628-1632 ◽  
Author(s):  
H.B. Ye ◽  
J.F. Kong ◽  
W. Pan ◽  
W.Z. Shen ◽  
B. Wang

2001 ◽  
Vol 707 ◽  
Author(s):  
H. Okumoto ◽  
T. Yatabe ◽  
A. Richter ◽  
M. Shimomura ◽  
A. Kaito ◽  
...  

ABSTRACTSelf-organized oligosilane thin films possess molecular orientation normal to substrates with multilayered structure. This unique order of σ-conjugated molecules results in good hole transport properties. In the present work, carrier transport properties at low temperature are studied for 1,10-diethyldecamethylsilane polycrystalline films. Even at a temperature as low as 173 K, a time-of-flight transient photocurrent waveform showed a clear plateau and a sharp decay, whose shape is similar to that at room temperature. Their hole mobility followed Arrhe-nius type temperature dependence with a small activation energy of 0.09 eV. The hole mobility of 6.3×10-5cm-2/Vs at 193 K was more than 2 orders of magnitude higher than that of typical polysilanes, which inevitably contain disordered structures hindering smooth carrier transport.


2014 ◽  
Vol 9 (6) ◽  
pp. 1623-1628 ◽  
Author(s):  
Yasuyuki Ueda ◽  
Hayato Tsuji ◽  
Hideyuki Tanaka ◽  
Eiichi Nakamura

2021 ◽  
pp. 154-161
Author(s):  
Yanfeng Yin ◽  
Wenming Tian ◽  
Hui Luo ◽  
Yuxiang Gao ◽  
Tingting Zhao ◽  
...  

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