Comparative Study of Photocarrier Dynamics in CVD-deposited CuWO4, CuO, and WO3 Thin Films for Photoelectrocatalysis

AbstractThe temporal evolution of photogenerated carriers in CuWO4, CuO and WO3 thin films deposited via a direct chemical vapor deposition approach was studied using time-resolved microwave conductivity and terahertz spectroscopy to obtain the photocarrier lifetime, mobility and diffusion length. The carrier transport properties of the films prepared by varying the copper-to-tungsten stoichiometry were compared and the results related to the performance of the compositions built into respective photoelectrochemical cells. Superior carrier mobility was observed for CuWO4 under frontside illumination.

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Time-resolved Photoconductivity as a Probe of Carrier Transport in Microcrystalline Silicon

MRS Proceedings ◽

10.1557/proc-0910-a01-01 ◽

2006 ◽

Vol 910 ◽

Author(s):

Steve Reynolds

Keyword(s):

Density Of States ◽

Carrier Mobility ◽

Carrier Transport ◽

Film Growth ◽

Hole Mobility ◽

Transport Parameters ◽

Microcrystalline Silicon ◽

Time Resolved ◽

Transient Photoconductivity ◽

Transport Measurements

AbstractThe use of transient photoconductivity techniques in the investigation of carrier transport in microcrystalline silicon is described. Results are presented which highlight variations in transport parameters such as carrier mobility and density of states with structure composition. Hole mobility is significantly enhanced by crystalline content in the film of 10% or less. The density of states inferred from transport measurements parallel to and at right angles to the direction of film growth differ somewhat, suggesting that transport may be anisotropic.

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Anomalous change of carrier transport property of ferroelectric Hf0.5Zr0.5O2 thin films in the first poling treatment

Japanese Journal of Applied Physics ◽

10.35848/1347-4065/ac48ce ◽

2022 ◽

Author(s):

Yukinori Morita ◽

Hiroyuki OTA ◽

Shinji MIGITA

Keyword(s):

Thin Films ◽

Electric Field ◽

Transport Property ◽

Carrier Transport ◽

Current Flow ◽

Discontinuity Point ◽

Voltage Sweep ◽

Current Voltage ◽

Carrier Transport Property ◽

Carrier Transport Properties

Abstract Carrier transport properties of ferroelectric Hf0.5Zr0.5O2 (HZO) thin films have been investigated on metal-ferroelectric-metal (MFM) capacitor in the first current flow of ferroelectric poling treatment. In current–voltage (I–V) measurement of MFM capacitor, a kink or discontinuity point of derivative in I–V characteristic appears, and after the cyclic voltage sweep this kink disappears. This phenomenon is different from the ferroelectric instabilities after several thousand or million voltage cycle applies reported as the wake-up and fatigue. From the analysis using Poole-Frenkel plot of I–V characteristics, it is suggested that irreversible trap generation by electric field apply occurs in poling treatment.

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Multi-carrier transport properties in p-type ZnO thin films

Solid State Communications ◽

10.1016/j.ssc.2009.06.030 ◽

2009 ◽

Vol 149 (39-40) ◽

pp. 1628-1632 ◽

Cited By ~ 2

Author(s):

H.B. Ye ◽

J.F. Kong ◽

W. Pan ◽

W.Z. Shen ◽

B. Wang

Keyword(s):

Thin Films ◽

Transport Properties ◽

Carrier Transport ◽

Zno Thin Films ◽

P Type ◽

Carrier Transport Properties

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Hole Transport in Self-Organized Oligosilane Thin Films with Highly Ordered Hopping Sites

MRS Proceedings ◽

10.1557/proc-707-bb10.46.1 ◽

2001 ◽

Vol 707 ◽

Author(s):

H. Okumoto ◽

T. Yatabe ◽

A. Richter ◽

M. Shimomura ◽

A. Kaito ◽

...

Keyword(s):

Thin Films ◽

Transport Properties ◽

Carrier Transport ◽

Hole Mobility ◽

Multilayered Structure ◽

Hole Transport ◽

Conjugated Molecules ◽

Disordered Structures ◽

Self Organized ◽

Carrier Transport Properties

ABSTRACTSelf-organized oligosilane thin films possess molecular orientation normal to substrates with multilayered structure. This unique order of σ-conjugated molecules results in good hole transport properties. In the present work, carrier transport properties at low temperature are studied for 1,10-diethyldecamethylsilane polycrystalline films. Even at a temperature as low as 173 K, a time-of-flight transient photocurrent waveform showed a clear plateau and a sharp decay, whose shape is similar to that at room temperature. Their hole mobility followed Arrhe-nius type temperature dependence with a small activation energy of 0.09 eV. The hole mobility of 6.3×10-5cm-2/Vs at 193 K was more than 2 orders of magnitude higher than that of typical polysilanes, which inevitably contain disordered structures hindering smooth carrier transport.

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Electrical Properties in Cvd Diamond Films

MRS Proceedings ◽

10.1557/proc-302-257 ◽

1993 ◽

Vol 302 ◽

Cited By ~ 3

Author(s):

S. Zhao ◽

K.K. Gan ◽

H. Kagan ◽

R. Kass ◽

R. Malchow ◽

...

Keyword(s):

Electrical Properties ◽

Carrier Mobility ◽

Average Distance ◽

Diamond Films ◽

Chemical Vapor ◽

Cvd Diamond ◽

Time Resolved ◽

Chemical Vapor Deposited ◽

Natural Type ◽

Cvd Diamond Film

ABSTRACTThe electrical properties associated with carrier mobility, μ, and lifetime, τ, have been investigated for the chemical vapor deposited (CVD) diamond films using charged particle-induced conductivity and time resolved transient photo-induced conductivity. The collection distance, d, the average distance which electron and hole depart when driven by an applied electric field E, was measured by both methods. The collection distance is related to the carrier mobility and lifetime by d = μEτ Our measurements show that the collection distance increases linearly with sample thickness for CVD diamond films. The collection distance at the growth side of the CVD diamond film is comparable to that of single crystal natural type IIa diamond; at the substrate side of the film, the collection distance is near zero. No saturation of the collection distance is observed for film thickness up to 500 microns.

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