Segregation of phosphorus and germanium to grain boundaries in chemical vapor deposited silicon-germanium films determined by scanning transmission electron microscopy

2000 ◽  
Vol 29 (8) ◽  
pp. L13-L17 ◽  
Author(s):  
W. Qin ◽  
D. G. Ast ◽  
T. I. Kamins
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Grain Boundaries ◽  
Silicon Germanium ◽  
Scanning Transmission Electron Microscopy ◽  
Chemical Vapor ◽  
Scanning Transmission Electron ◽  
Transmission Electron ◽  
Chemical Vapor Deposited ◽  
Scanning Transmission

scholarly journals Correlating Atom Probe Tomography with Atomic-Resolved Scanning Transmission Electron Microscopy: Example of Segregation at Silicon Grain Boundaries

2017 ◽  
Vol 23 (2) ◽  
pp. 291-299 ◽  
Author(s):  
Andreas Stoffers ◽  
Juri Barthel ◽  
Christian H. Liebscher ◽  
Baptiste Gault ◽  
Oana Cojocaru-Mirédin ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Grain Boundary ◽  
Grain Boundaries ◽  
Atom Probe Tomography ◽  
Scanning Transmission Electron Microscopy ◽  
Atom Probe ◽  
Scanning Transmission Electron ◽  
Transmission Electron ◽  
Scanning Transmission

AbstractIn the course of a thorough investigation of the performance-structure-chemistry interdependency at silicon grain boundaries, we successfully developed a method to systematically correlate aberration-corrected scanning transmission electron microscopy and atom probe tomography. The correlative approach is conducted on individual APT and TEM specimens, with the option to perform both investigations on the same specimen in the future. In the present case of a Σ9 grain boundary, joint mapping of the atomistic details of the grain boundary topology, in conjunction with chemical decoration, enables a deeper understanding of the segregation of impurities observed at such grain boundaries.

Scanning Transmission Electron Microscopy of Polyethylene Crystals

1980 ◽  
Vol 38 ◽  
pp. 242-245
Author(s):  
F. Khoury ◽  
L. H. Bolz
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Crystallization Temperature ◽  
Scanning Transmission Electron Microscopy ◽  
Growth Habit ◽  
Lateral Growth ◽  
Scanning Transmission Electron ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Growth Habits

The lateral growth habits and non-planar conformations of polyethylene crystals grown from dilute solutions (<0.1% wt./vol.) are known to vary depending on the crystallization temperature.1-3 With the notable exception of a study by Keith2, most previous studies have been limited to crystals grown at <95°C. The trend in the change of the lateral growth habit of the crystals with increasing crystallization temperature (other factors remaining equal, i.e. polymer mol. wt. and concentration, solvent) is illustrated in Fig.l. The lateral growth faces in the lozenge shaped type of crystal (Fig.la) which is formed at lower temperatures are {110}. Crystals formed at higher temperatures exhibit 'truncated' profiles (Figs. lb,c) and are bound laterally by (110) and (200} growth faces. In addition, the shape of the latter crystals is all the more truncated (Fig.lc), and hence all the more elongated parallel to the b-axis, the higher the crystallization temperature.

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