Modeling of the zero-bias resistance-area product of long wavelength infrared HgCdTe-on-Si diodes fabricated from molecular beam epitaxy-grown epitaxial layers
2005 ◽
Vol 34
(10)
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pp. 1280-1286
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Keyword(s):
2002 ◽
Vol 31
(7)
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pp. 710-714
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1999 ◽
2005 ◽
Vol 34
(6)
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pp. 832-838
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Keyword(s):
2015 ◽
Vol 425
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pp. 25-28
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Keyword(s):
Keyword(s):
2014 ◽
2013 ◽
Vol 49
(5)
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pp. 485-491
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2004 ◽
Vol 33
(6)
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pp. 531-537
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