Progress in the Molecular Beam Epitaxy of HgCdTe on Large-Area Si and CdZnTe Substrates

2009 ◽  
Vol 38 (8) ◽  
pp. 1764-1770 ◽  
Author(s):  
M. Reddy ◽  
J. M. Peterson ◽  
S. M. Johnson ◽  
T. Vang ◽  
J. A. Franklin ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Large Area ◽  
Cdznte Substrates

Characterization of HgCdTe Films Grown on Large-Area CdZnTe Substrates by Molecular Beam Epitaxy

2017 ◽  
Vol 46 (9) ◽  
pp. 5374-5378 ◽  
Author(s):  
F. Erdem Arkun ◽  
Dennis D. Edwall ◽  
Jon Ellsworth ◽  
Sheri Douglas ◽  
Majid Zandian ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Large Area ◽  
Cdznte Substrates

Molecular Beam Epitaxy Growth of HgCdTe on Large-Area Si and CdZnTe Substrates

2011 ◽  
Vol 40 (8) ◽  
pp. 1706-1716 ◽  
Author(s):  
M. Reddy ◽  
J. M. Peterson ◽  
T. Vang ◽  
J. A. Franklin ◽  
M. F. Vilela ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Molecular Beam Epitaxy Growth ◽  
Large Area ◽  
Cdznte Substrates

Characterization of Rotational Stacking Layers in Large-Area MoSe2 Film Grown by Molecular Beam Epitaxy and Interaction with Photon

2017 ◽  
Vol 9 (36) ◽  
pp. 30786-30796 ◽  
Author(s):  
Yoon-Ho Choi ◽  
Dong-Hyeok Lim ◽  
Jae-Hun Jeong ◽  
Dambi Park ◽  
Kwang-Sik Jeong ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Large Area

Molecular beam epitaxy of large-area SnSe 2 with monolayer thickness fluctuation

2D Materials ◽  
2016 ◽  
Vol 4 (1) ◽  
pp. 014006 ◽  
Author(s):  
Young Woon Park ◽  
Sahng-Kyoon Jerng ◽  
Jae Ho Jeon ◽  
Sanjib Baran Roy ◽  
Kamran Akbar ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Large Area

Large Area Synthesis of 1D-MoSe2Using Molecular Beam Epitaxy

2017 ◽  
Vol 29 (12) ◽  
pp. 1605641 ◽  
Author(s):  
Sock Mui Poh ◽  
Sherman J. R. Tan ◽  
Xiaoxu Zhao ◽  
Zhongxin Chen ◽  
Ibrahim Abdelwahab ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Large Area

scholarly journals Direct Growth of Antimonene on C-Plane Sapphire by Molecular Beam Epitaxy

2020 ◽  
Vol 10 (2) ◽  
pp. 639
Author(s):  
Minghui Gu ◽  
Chen Li ◽  
Yuanfeng Ding ◽  
Kedong Zhang ◽  
Shunji Xia ◽  
...  
Keyword(s):  
Phase Diagram ◽  
Molecular Beam Epitaxy ◽  
Sapphire Substrate ◽  
Molecular Beam ◽  
Three Dimensional ◽  
High Mobility ◽  
Two Dimensional ◽  
Large Area ◽  
High Quality ◽  
Direct Growth

Monolayer antimony (antimonene) has been reported for its excellent properties, such as tuneable band gap, stability in the air, and high mobility. However, growing high quality, especially large-area antimonene, remains challenging. In this study, we report the direct growth of antimonene on c-plane sapphire substrate while using molecular beam epitaxy (MBE). We explore the effect of growth temperature on antimonene formation and present a growth phase diagram of antimony. The effect of antimony sources (Sb2 or Sb4) and a competing mechanism between the two-dimensional (2D) and three-dimensional (3D) growth processes and the effects of adsorption and cracking of the source molecules are also discussed. This work offers a new method for growing antimonene and it provides ideas for promoting van der Waals epitaxy.

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