Room-temperature continuous-wave operation of GaN-based laser diodes grown by raised-pressure metalorganic chemical vapor deposition

Vapor Deposition ◽

Room Temperature ◽

Continuous Wave ◽

Laser Diodes ◽

Chemical Vapor ◽

First Room-Temperature Continuous-Wave Operation of Self-Formed InGaAs Quantum Dot-Like Laser on Si substrate Grown by Metalorganic Chemical Vapor Deposition

Japanese Journal of Applied Physics ◽

10.1143/jjap.39.3860 ◽

2000 ◽

Vol 39 (Part 1, No. 7A) ◽

pp. 3860-3862 ◽

Cited By ~ 9

Author(s):

Zaman Iqbal Kazi ◽

Takashi Egawa ◽

Takashi Jimbo ◽

Masayoshi Umeno

Keyword(s):

Quantum Dot ◽

Vapor Deposition ◽

Room Temperature ◽

Continuous Wave ◽

Chemical Vapor ◽

Si Substrate ◽

Room‐temperature continuous‐wave operation of an AlGaInP double heterostructure laser grown by atmospheric pressure metalorganic chemical vapor deposition

10.1063/1.96366 ◽

1985 ◽

Vol 47 (10) ◽

pp. 1027-1028 ◽

Cited By ~ 106

Author(s):

Masao Ikeda ◽

Yoshifumi Mori ◽

Hiromitsu Sato ◽

Kunio Kaneko ◽

Naozo Watanabe

Keyword(s):

Vapor Deposition ◽

Atmospheric Pressure ◽

Room Temperature ◽

Continuous Wave ◽

Chemical Vapor ◽

Heterostructure Laser ◽

Room‐temperature continuous‐wave operation of a GaInP/AlGaInP multiquantum well laser grown by metalorganic chemical vapor deposition

10.1063/1.97961 ◽

1987 ◽

Vol 50 (16) ◽

pp. 1033-1034 ◽

Cited By ~ 25

Author(s):

M. Ikeda ◽

A. Toda ◽

K. Nakano ◽

Y. Mori ◽

N. Watanabe

Keyword(s):

Vapor Deposition ◽

Room Temperature ◽

Continuous Wave ◽

Chemical Vapor ◽

Metalorganic Chemical ◽

Multiquantum Well

Room‐temperature laser operation of quantum‐well Ga(1−x)AlxAs‐GaAs laser diodes grown by metalorganic chemical vapor deposition

10.1063/1.90026 ◽

1978 ◽

Vol 32 (5) ◽

pp. 295-297 ◽

Cited By ~ 125

Author(s):

R. D. Dupuis ◽

P. D. Dapkus ◽

Nick Holonyak ◽

E. A. Rezek ◽

R. Chin

Keyword(s):

Quantum Well ◽

Vapor Deposition ◽

Room Temperature ◽

Laser Diodes ◽

Chemical Vapor ◽

Laser Operation ◽

Gaas Laser ◽

Continuous-wave room-temperature operation of InGaN/GaN multiquantum well lasers grown by low-pressure metalorganic chemical vapor deposition

10.1117/12.304463 ◽

1998 ◽

Cited By ~ 2

Author(s):

Manijeh Razeghi ◽

Adam W. Saxler ◽

Patrick Kung ◽

Danielle Walker ◽

Xiaolong Zhang ◽

...

Keyword(s):

Vapor Deposition ◽

Room Temperature ◽

Continuous Wave ◽

Chemical Vapor ◽

Low Pressure ◽

Metalorganic Chemical ◽

Room Temperature Operation ◽

Multiquantum Well

Short‐wavelength room‐temperature continuous‐wave laser operation of InAlP‐InGaP superlattices grown by metalorganic chemical vapor deposition

10.1063/1.112181 ◽

1994 ◽

Vol 65 (7) ◽

pp. 854-856 ◽

Cited By ~ 9

Author(s):

R. V. Chelakara ◽

M. R. Islam ◽

J. G. Neff ◽

K. G. Fertitta ◽

A. L. Holmes ◽

...

Keyword(s):

Vapor Deposition ◽

Room Temperature ◽

Continuous Wave ◽

Chemical Vapor ◽

Laser Operation ◽

Continuous Wave Laser ◽

Wave Laser ◽

Room-temperature continuous-wave operation of AlGaAs-GaAs single-quantum-well lasers on Si by metalorganic chemical-vapor deposition using AlGaAs-AlGaP intermediate layers

IEEE Journal of Quantum Electronics ◽

10.1109/3.90007 ◽

1991 ◽

Vol 27 (6) ◽

pp. 1798-1803 ◽

Cited By ~ 15

Author(s):

T. Egawa ◽

T. Soga ◽

T. Jimbo ◽

M. Umeno

Keyword(s):

Vapor Deposition ◽

Room Temperature ◽

Continuous Wave ◽

Chemical Vapor ◽

Single Quantum ◽

Single Quantum Well ◽

Intermediate Layers ◽

Room‐temperature cw operation of InGaP/InGaAlP visible light laser diodes on GaAs substrates grown by metalorganic chemical vapor deposition

10.1063/1.96796 ◽

1986 ◽

Vol 48 (3) ◽

pp. 207-208 ◽

Cited By ~ 156

Author(s):

Masayuki Ishikawa ◽

Yasuo Ohba ◽

Hideto Sugawara ◽

Motoyuki Yamamoto ◽

Takatosi Nakanisi

Keyword(s):

Visible Light ◽

Vapor Deposition ◽

Room Temperature ◽

Laser Diodes ◽

Chemical Vapor ◽

Cw Operation ◽

Gaas Substrates ◽

Room-Temperature Pulsed Operation of GaN-Based Laser Diodes on a-Face Sapphire Substrate Grown by Low-Pressure Metalorganic Chemical Vapor Deposition

Japanese Journal of Applied Physics ◽

10.1143/jjap.37.l1231 ◽

1998 ◽

Vol 37 (Part 2, No. 10B) ◽

pp. L1231-L1233 ◽

Cited By ~ 6

Author(s):

Yoshinori Kimura ◽

Mamoru Miyachi ◽

Hirokazu Takahashi ◽

Toshiyuki Tanaka ◽

Mitsuru Nishitsuka ◽

...

Keyword(s):

Sapphire Substrate ◽

Vapor Deposition ◽

Room Temperature ◽

Laser Diodes ◽

Chemical Vapor ◽

Low Pressure ◽

Low-threshold room-temperature continuous-wave InP quantum dot coupled to InGaP quantum well heterorstructure lasers grown by metalorganic chemical vapor deposition

International Conference onIndium Phosphide and Related Materials, 2003. ◽

10.1109/iciprm.2003.1205319 ◽

2003 ◽

Author(s):

R.D. Heller ◽

G. Walter ◽

N. Holonyak ◽

D.T. Mathes ◽

R. Hull ◽

...

Keyword(s):

Quantum Dot ◽

Quantum Well ◽

Vapor Deposition ◽

Room Temperature ◽

Continuous Wave ◽

Chemical Vapor ◽

Low Threshold ◽