The effect of different electrode structures on the dielectric properties of lanthanum-doped lead titanate ferroelectric thin films

2007 ◽  
Vol 1 (3) ◽  
pp. 322-325
Author(s):  
Hong Liu ◽  
Zhaohui Pu ◽  
Xiaohong Zhu ◽  
Dingquan Xiao ◽  
Jianguo Zhu
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Lead Titanate ◽  
Ferroelectric Thin Films

Effects of domain formation on the dielectric properties of ferroelectric thin films

2001 ◽  
Vol 32 (1-4) ◽  
pp. 235-249 ◽  
Author(s):  
N. A. Pertsev ◽  
V. G. Koukhar ◽  
R. Waser ◽  
S. Hoffmann
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Ferroelectric Thin Films ◽  
Domain Formation

CONTRIBUTION OF DOMAIN MOTION TO THE DIELECTRIC PROPERTIES OF FERROELECTRIC THIN FILMS

2005 ◽  
Vol 73 (1) ◽  
pp. 17-23
Author(s):  
ZEYU ZHENG ◽  
SHUREN ZHANG ◽  
JINGSONG LIU ◽  
CHENGTAO YANG
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Ferroelectric Thin Films ◽  
Domain Motion

Dielectric Properties of Multilayered Ferroelectric Thin Films Fabricated by Sol-Gel Method

1994 ◽  
Vol 33 (Part 1, No. 9B) ◽  
pp. 5272-5276 ◽  
Author(s):  
Yutaka Ohya ◽  
Takashi Ito ◽  
Yasutaka Takahashi
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Sol Gel ◽  
Ferroelectric Thin Films ◽  
Gel Method ◽  
Sol Gel Method

The role of nanoporosity on the local piezo and ferroelectric properties of lead titanate thin films

2015 ◽  
Vol 3 (5) ◽  
pp. 1035-1043 ◽  
Author(s):  
Alichandra Castro ◽  
Paula Ferreira ◽  
Brian J. Rodriguez ◽  
Paula M. Vilarinho
Keyword(s):  
Thin Films ◽  
Coercive Field ◽  
Lead Titanate ◽  
Ferroelectric Properties ◽  
Ferroelectric Thin Films ◽  
Piezoelectric Response ◽  
Nanoporous Films ◽  
Switching Behaviour ◽  
Dense Films

Nanoporous PbTiO3 films present enhanced tetragonality at lower temperatures than respective dense films. Moreover, the porosity present in the nanoporous films allows an increase of the local piezoelectric response and a decrease of the local coercive field. As a result, these nanoporous films might be used to improve the switching behaviour of ferroelectric thin films.

Sign in / Sign up

Export Citation Format

Share Document