Effect of Gold Thickness and Annealing on Optical and Electrical Properties of TiO2/Au/TiO2 Multilayers as Transparent Composite Electrode on Flexible Substrate

JOM ◽  
2015 ◽  
Vol 67 (4) ◽  
pp. 840-844 ◽  
Author(s):  
Aritra Dhar ◽  
Zhao Zhao ◽  
T. L. Alford

2013 ◽  
Vol 1577 ◽  
Author(s):  
Aritra Dhar ◽  
T. L. Alford

ABSTRACTHighly transparent composite electrodes made of multilayers of In- and Ga-doped ZnO and Cu (IGZO/Cu/IGZO) thin films (30/3-9/30 nm thick) are deposited onto flexible substrates at room temperature and by using radio frequency magnetron sputtering. The effect of Cu thickness on the electrical and optical properties of the multilayer stack has been studied in accordance with the Cu morphology. The optical and electrical properties of the multilayers are studied with the UV–Vis spectrophotometry, Hall measurement and four point probe analyses. Results are compared with those from a single IGZO layered thin film. The average optical transmittance and sheet resistance both decreases with increase of copper thickness and has been optimized at 6 nm Cu middle layer thickness. The Haacke figure of merit (FOM) has been calculated to evaluate the performance of the films. The highest FOM achieved is 6 x 10-3 Ω-1 for a Cu thickness of 6 nm with a sheet resistance of 12.2 Ω/sq and an average transmittance of 86%. The multilayered thin films are annealed upto 150 °C in vacuum, forming gas and O2 environments and the optical and electrical properties are studied and compared against the as-deposited samples. Thus IGZO/Cu/IGZO multilayer is a promising flexible electrode material for the next-generation flexible optoelectronics.



2013 ◽  
Vol 1552 ◽  
pp. 101-106
Author(s):  
Aritra Dhar ◽  
T. L. Alford

ABSTRACTMultilayer structures of Nb2O5/Ag/Nb2O5 have been deposited onto flexible substrates by sputtering at room temperature to develop indium free composite transparent conductive electrodes. The optical and electrical properties of the multilayers are measured by UV–Visible spectroscopy, Hall measurement and four point probe and the effect of Ag thickness has been studied. The critical thickness of Ag to form a continuous conducting layer is found to be 9.5 nm and the multilayer stack has been optimized to obtain a sheet resistance of 7.2 Ω/sq and an average optical transmittance of 86 % at 550 nm. The Haacke figure of merit (FOM) has been calculated for the films, and the multilayer with 9.5 nm thick Ag layer has the highest FOM with 31.5 x 10-3 Ω/sq, which is one of the best FOM reported till date for room temperature deposition on flexible substrates. The multilayered samples are annealed in vacuum, forming gas, air and O2 environments and the optical and electrical properties are compared against the as-deposited samples.



2012 ◽  
Vol 33 (11) ◽  
pp. 1232-1235
Author(s):  
李晓妮 LI Xiao-ni ◽  
方芳 FANG Fang ◽  
方铉 FANG Xuan ◽  
陈新颖 CHEN Xin-ying ◽  
魏志鹏 WEI Zhi-peng ◽  
...  




2012 ◽  
Vol 525 ◽  
pp. 162-166 ◽  
Author(s):  
Mihnea Ioan Ionescu ◽  
Farid Bensebaa ◽  
Ben Li Luan




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