uv photodetector
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2022 ◽  
Vol 160 ◽  
pp. 110350
Author(s):  
P.V. Karthik Yadav ◽  
B. Ajitha ◽  
Captain M.Anees Ahmed ◽  
Y. Ashok Kumar Reddy ◽  
Vasudeva Reddy Minnam Reddy

2021 ◽  
Author(s):  
longxing Su ◽  
Lianqi Zhao ◽  
Sheng-Yu Chen ◽  
Yingdong Deng ◽  
Ruihua Pu ◽  
...  

Crystals ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 1479
Author(s):  
Qiannan Ye ◽  
Xu Zhang ◽  
Rihui Yao ◽  
Dongxiang Luo ◽  
Xianzhe Liu ◽  
...  

Optical detection is of great significance in various fields such as industry, military, and medical treatment, especially ultraviolet (UV) photodetectors. Moreover, as the demand for wearable devices continues to increase, the UV photodetector, which is one of the most important sensors, has put forward higher requirements for bending resistance, durability, and transparency. Tin oxide (SnO2) has a wide band gap, high ultraviolet exciton gain, etc., and is considered to be an ideal material for preparing UV photodetectors. At present, SnO2-based UV photodetectors have a transparency of more than 70% in the visible light region and also have excellent flexibility of 160% tensile strain. Focusing on SnO2 nanostructures, the article mainly summarizes the progress of SnO2 UV photodetectors in flexibility and transparency in recent years and proposes feasible optimization directions and difficulties.


2021 ◽  
Vol 11 (22) ◽  
pp. 10833
Author(s):  
Furqan Khairi Mohammed ◽  
Khi Poay Beh ◽  
Asmiet Ramizy ◽  
Naser M. Ahmed ◽  
Fong Kwong Yam ◽  
...  

This work presents the role of graphene in improving the performance of a porous GaN-based UV photodetector. The porous GaN-based photodetector, with a mean pore diameter of 35 nm, possessed higher UV sensitivity, about 95% better compared to that of the as-received (non-porous) photodetector. In addition, it exhibits a lower magnitude of leakage current at dark ambient, about 70.9 μA, compared to that of the as-received photodetector with 13.7 mA. However, it is also highly resistive in nature due to the corresponding electrochemical process selectively dissolute doped regions. Herein, two types of graphene, derived from CVD and the electrochemical exfoliation (EC) process, were cladded onto the porous GaN region. The formation of a graphene/porous GaN interface, as evident from the decrease in average distance between defects as determined from Raman spectroscopy, infers better charge accumulation and conductance, which significantly improved UV sensing. While the leakage current shows little improvement, the UV sensitivity was greatly enhanced, by about 460% and 420% for CVD and EC cladded samples. The slight difference between types of graphene was attributed to the coverage area on porous GaN, where CVD-grown graphene tends to be continuous while EC-graphene relies on aggregation to form films.


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