Optimization of IGZO/Cu/IGZO Multilayers as Transparent Composite Electrode on Flexible Substrate by Room-temperature Sputtering and Post-Deposition Anneals

2013 ◽  
Vol 1577 ◽  
Author(s):  
Aritra Dhar ◽  
T. L. Alford
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Sheet Resistance ◽  
Room Temperature ◽  
Flexible Substrate ◽  
Middle Layer ◽  
Optical Transmittance ◽  
Optical And Electrical Properties ◽  
Composite Electrodes ◽  
Transparent Composite

ABSTRACTHighly transparent composite electrodes made of multilayers of In- and Ga-doped ZnO and Cu (IGZO/Cu/IGZO) thin films (30/3-9/30 nm thick) are deposited onto flexible substrates at room temperature and by using radio frequency magnetron sputtering. The effect of Cu thickness on the electrical and optical properties of the multilayer stack has been studied in accordance with the Cu morphology. The optical and electrical properties of the multilayers are studied with the UV–Vis spectrophotometry, Hall measurement and four point probe analyses. Results are compared with those from a single IGZO layered thin film. The average optical transmittance and sheet resistance both decreases with increase of copper thickness and has been optimized at 6 nm Cu middle layer thickness. The Haacke figure of merit (FOM) has been calculated to evaluate the performance of the films. The highest FOM achieved is 6 x 10-3 Ω-1 for a Cu thickness of 6 nm with a sheet resistance of 12.2 Ω/sq and an average transmittance of 86%. The multilayered thin films are annealed upto 150 °C in vacuum, forming gas and O2 environments and the optical and electrical properties are studied and compared against the as-deposited samples. Thus IGZO/Cu/IGZO multilayer is a promising flexible electrode material for the next-generation flexible optoelectronics.

Effect of Silver thickness and Annealing on Optical and Electrical Properties of Nb2O5/Ag/Nb2O5 Multilayers as Transparent Composite Electrode on Flexible Substrate

2013 ◽  
Vol 1552 ◽  
pp. 101-106
Author(s):  
Aritra Dhar ◽  
T. L. Alford
Keyword(s):  
Electrical Properties ◽  
Room Temperature ◽  
Flexible Substrate ◽  
Optical Transmittance ◽  
Conducting Layer ◽  
Flexible Substrates ◽  
Optical And Electrical Properties ◽  
Average Optical Transmittance ◽  
Temperature Deposition ◽  
Transparent Composite

ABSTRACTMultilayer structures of Nb2O5/Ag/Nb2O5 have been deposited onto flexible substrates by sputtering at room temperature to develop indium free composite transparent conductive electrodes. The optical and electrical properties of the multilayers are measured by UV–Visible spectroscopy, Hall measurement and four point probe and the effect of Ag thickness has been studied. The critical thickness of Ag to form a continuous conducting layer is found to be 9.5 nm and the multilayer stack has been optimized to obtain a sheet resistance of 7.2 Ω/sq and an average optical transmittance of 86 % at 550 nm. The Haacke figure of merit (FOM) has been calculated for the films, and the multilayer with 9.5 nm thick Ag layer has the highest FOM with 31.5 x 10-3 Ω/sq, which is one of the best FOM reported till date for room temperature deposition on flexible substrates. The multilayered samples are annealed in vacuum, forming gas, air and O2 environments and the optical and electrical properties are compared against the as-deposited samples.

STRUCTURAL, OPTICAL AND ELECTRICAL PROPERTIES OF Al-DOPED ZnO TRANSPARENT CONDUCTING OXIDE FOR SOLAR CELL APPLICATIONS

2011 ◽  
Vol 04 (04) ◽  
pp. 401-405 ◽  
Author(s):  
W. CHER ◽  
S. YICK ◽  
S. XU ◽  
Z. J. HAN ◽  
K. OSTRIKOV
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Electrical Properties ◽  
Transparent Conducting Oxide ◽  
Optical Transmittance ◽  
Nitrogen Atmosphere ◽  
Optical And Electrical Properties ◽  
Glass Substrates ◽  
Optimal Annealing Temperature ◽  
Post Synthesis

Al -doped zinc oxide (AZO) thin films are deposited onto glass substrates using radio-frequency reactive magnetron sputtering and the improvements in their physical properties by post-synthesis thermal treatment are reported. X-ray diffraction spectra show that the structure of films can be controlled by adjusting the annealing temperatures, with the best crystallinity obtained at 400°C under a nitrogen atmosphere. These films exhibit improved quality and better optical transmittance as indicated by the UV-Vis spectra. Furthermore, the sheet resistivity is found to decrease from 1.87 × 10-3 to 5.63 × 10-4Ω⋅cm and the carrier mobility increases from 6.47 to 13.43 cm2 ⋅ V-1 ⋅ s-1 at the optimal annealing temperature. Our results demonstrate a simple yet effective way in controlling the structural, optical and electrical properties of AZO thin films, which is important for solar cell applications.

Indium-tin oxide thin films deposited at room temperature on glass and PET substrates: Optical and electrical properties variation with the H2–Ar sputtering gas mixture

2015 ◽  
Vol 344 ◽  
pp. 217-222 ◽  
Author(s):  
L. Álvarez-Fraga ◽  
F. Jiménez-Villacorta ◽  
J. Sánchez-Marcos ◽  
A. de Andrés ◽  
C. Prieto
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Room Temperature ◽  
Gas Mixture ◽  
Optical And Electrical Properties ◽  
Oxide Thin Films

The effect of stoichiometry on the microstructure and properties of lead lanthanum titanate thin films

1995 ◽  
Vol 10 (11) ◽  
pp. 2777-2787 ◽  
Author(s):  
Ashraf R. Khan ◽  
Seshu B. Desu
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Relative Permittivity ◽  
Room Temperature ◽  
Optical Transmittance ◽  
High Resistivity ◽  
Charge Storage ◽  
Electrical Measurements ◽  
Storage Density ◽  
Lanthanum Titanate

Thin films of Lead Lanthanum Titanate (PLT) corresponding to 28 at. % of La were prepared by the metal-organic decomposition (MOD) process. The films were fabricated from two solutions of different composition. The composition of the first solution was determined, assuming that the incorporation of La3+ in the PbTiO3 structure gives rise to A-site or Pb vacancies, whereas for the composition of the other solution the creation of B-site or Ti vacancies was assumed. The effect of excess lead on the microstructure and the optical and electrical properties was studied for 0% to 20% excess PbO. The x-ray diffraction patterns of all films at room temperature indicated a cubic structure with a lattice constant of 3.92 Å. Optical and electrical measurements showed the films made assuming B-site vacancies had better properties. In general, excess PbO was found to improve the optical transmittance as well as the electrical properties of films. However, in films assuming the formation of B-site vacancies, PLT showed improved electrical properties only up to 5–10% excess PbO, while higher PbO additions had a deleterious effect. The films had a high resistivity, good relative permittivity, low loss, very low leakage current density, and high charge storage density. A type-B film with 10% excess Pb had a relative permittivity of 1340 at 100 kHz and a charge storage density of around 16.1 μC/cm2 at a field of 200 kV/cm at room temperature.

scholarly journals Investigation of the Structural, Optical and Electrical Properties of AgInSe2 Thin Films

2018 ◽  
Vol 31 (1) ◽  
pp. 37 ◽  
Author(s):  
Iman Hameed Khudayer ◽  
Bushra Hashem Hussein Ali ◽  
Mohammed Hamid Mustafa ◽  
Ayser Jumah Ibrahim
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Grain Size ◽  
Electrical Properties ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Optical And Electrical Properties ◽  
X Ray ◽  
20 Nm

  The Silver1Indium1Selenide (AgInSe2) (AIS) thin1films of (3001±20) nm thickness  have been1prepared2from the compound alloys2using thermal evaporation2 technique onto the glass2substrate at room temperature, with a deposition rate2(3±0.1) nm2sec-1. The2structural, optical and electrical3properties have been studied3at different annealing3temperatures (Ta=450, 550 and 650) K. The amount3or (concentration) of the elements3(Ag, In, Se) in the  prepared alloy3was verified using  an energy dispersive3x-ray spectrometer (EDS)3technology. X-ray diffraction3analysis shows that AIS alloy  prepared as (powder) and the thin films3are polycrystalline  of tetragonal3structure with preferential orientation3(112). The crystalline3size increases  as a function3of annealing temperature. The atomic force3microscope (AFM) technique  was used to examine3the  topography  and  estimate3the surface roughness, also the  average grain3size of the films. The results show3that the grain size increases3with annealing3temperature.   The optical4band gap of the films lies4in the range 1.6-1.9 eV. The films4appear to be4n-type indicating that the electrons4as a dominant charge4carrier. The electrical conductivity4increases  with a corresponding4increase in annealing4temperature.  

scholarly journals Preparation of polymer thin film using as NH3 gas Sensor

2014 ◽  
Vol 11 (2) ◽  
pp. 598-604
Author(s):  
Baghdad Science Journal
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Properties ◽  
Gas Sensor ◽  
Organic Semiconductor ◽  
Glass Substrate ◽  
Room Temperature ◽  
Oxidative Polymerization ◽  
Optical And Electrical Properties ◽  
Polymer Thin Film

Polyaniline organic Semiconductor polymer thin films have been prepared by oxidative polymerization at room temperature, this polymer was deposited on glass substrate with thickness 900nm, FTIR spectra was tested , the structural,optical and electrical properties were studied through XRD ,UV-Vis ,IR measurements ,the results was appeared that polymer thin film sensing to NH3 gas.

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