Characterization of GaN/AlGaN epitaxial layers grown by metalorganic chemical vapour deposition for high electron mobility transistor applications

Pramana ◽  
2010 ◽  
Vol 74 (1) ◽  
pp. 135-141 ◽  
Author(s):  
Bhubesh Chander Joshi ◽  
Manish Mathew ◽  
B. C. Joshi ◽  
D. Kumar ◽  
C. Dhanavantri
2015 ◽  
Vol 1109 ◽  
pp. 40-44 ◽  
Author(s):  
Nurhafizah Md Disa ◽  
Suriani Abu Bakar ◽  
S. Alfarisa ◽  
Azmi Mohamed ◽  
Illyas Md Isa ◽  
...  

Graphene is a remarkable material with high electron mobility, good mechanical strength and almost transparent. In this paper, we review the available methods which are chemical vapour deposition, Hummers and electrochemical exfoliation method for the production of graphene. Among the extensive studies in the application of graphene, supercapacitor has gained much attention nowadays. Therefore, we also briefly review the application of graphene as electrodes for the supercapacitor devices.


2009 ◽  
Vol 18 (1) ◽  
pp. 320-323
Author(s):  
Yan Jun-Feng ◽  
Wang Tao ◽  
Wang Jing-Wei ◽  
Zhang Zhi-Yong ◽  
Zhao Wu

1985 ◽  
Vol 63 (6) ◽  
pp. 664-669 ◽  
Author(s):  
C. Blaauw ◽  
C. Miner ◽  
B. Emmerstorfer ◽  
A. J. Springthorpe ◽  
M. Gallant

GaAs epitaxial layers have been grown on semi-insulating GaAs substrates using the technique of metalorganic chemical-vapour deposition. The organometallic compounds trimethylgallium and trimethylgallium–trimethylarsenic adduct were used as source reagents for gallium, whereas arsine and trimethylarsenic were used as sources for arsenic. Photoluminescence measurements at 8 K indicated that carbon was present in the layers as the dominant background acceptor, in most cases, and to a lesser extent copper (Cu) and manganese (Mn) acceptors were also present. Secondary-ion mass spectroscopy (SIMS) analysis confirmed the presence of these acceptors. Silicon was also identified by SIMS in most layers. The concentration of Cu and Mn was correlated with the starting substrate and with the deposition parameters (growth rate, deposition temperature). It was also found that their concentration in the epitaxial layers could be reduced by a careful heat-treatment and chemical etch prior to epitaxial growth.


1985 ◽  
Vol 21 (20) ◽  
pp. 903 ◽  
Author(s):  
L.J. Mawst ◽  
G. Costrini ◽  
C.A. Zmudzinski ◽  
M.E. Givens ◽  
M.A. Emanuel ◽  
...  

1989 ◽  
Vol 25 (22) ◽  
pp. 1496 ◽  
Author(s):  
B. Jalali ◽  
R.N. Nottenburg ◽  
W.S. Hobson ◽  
Y.K. Chen ◽  
T. Fullowan ◽  
...  

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