Review of contact-resistance analysis in nano-material

2018 ◽  
Vol 32 (2) ◽  
pp. 539-547 ◽  
Author(s):  
Jae Young Park ◽  
Jinsoo Cho ◽  
Seong Chan Jun
2020 ◽  
Vol 31 (10) ◽  
pp. 105601
Author(s):  
Nícolas Pinheiro Ramos ◽  
Luís Felipe dos Santos Carollo ◽  
Sandro Metrevelle Marcondes de Lima e Silva

Author(s):  
A.K. Rai ◽  
A.K. Petford-Long ◽  
A. Ezis ◽  
D.W. Langer

Considerable amount of work has been done in studying the relationship between the contact resistance and the microstructure of the Au-Ge-Ni based ohmic contacts to n-GaAs. It has been found that the lower contact resistivity is due to the presence of Ge rich and Au free regions (good contact area) in contact with GaAs. Thus in order to obtain an ohmic contact with lower contact resistance one should obtain a uniformly alloyed region of good contact areas almost everywhere. This can possibly be accomplished by utilizing various alloying schemes. In this work microstructural characterization, employing TEM techniques, of the sequentially deposited Au-Ge-Ni based ohmic contact to the MODFET device is presented.The substrate used in the present work consists of 1 μm thick buffer layer of GaAs grown on a semi-insulating GaAs substrate followed by a 25 Å spacer layer of undoped AlGaAs.


2013 ◽  
pp. 1-1
Author(s):  
Daphne Chen ◽  
Malak Qattan ◽  
Vaskar Saha ◽  
Liu Ji Zhong ◽  
Jean-Marc Schwartz ◽  
...  

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