Design and Tailoring the Optical and Electronic Characteristics of Silicon Doped PS/SnS2 New Composites for Nano-Semiconductors Devices

AbstractThird-order non-linearities are important because they allow control over light pulses in ubiquitous high-quality centro-symmetric materials like silicon and silica. Degenerate four-wave mixing provides a direct measure of the third-order non-linear sheet susceptibility χ(3)L (where L represents the material thickness) as well as technological possibilities such as optically gated detection and emission of photons. Using picosecond pulses from a free electron laser, we show that silicon doped with P or Bi has a value of χ(3)L in the THz domain that is higher than that reported for any other material in any wavelength band. The immediate implication of our results is the efficient generation of intense coherent THz light via upconversion (also a χ(3) process), and they open the door to exploitation of non-degenerate mixing and optical nonlinearities beyond the perturbative regime.

Download Full-text

Silicon doped carbon/Cu joints based on amorphous alloy brazing for first wall application

Fusion Engineering and Design ◽

10.1016/j.fusengdes.2006.05.004 ◽

2007 ◽

Vol 82 (1) ◽

pp. 35-40 ◽

Cited By ~ 16

Author(s):

Zhang-Jian Zhou ◽

Zhi-Hong Zhong ◽

Chang-Chun Ge

Keyword(s):

Amorphous Alloy ◽

First Wall ◽

Silicon Doped

Download Full-text

A study of vibrations of boron and phosphorus in silicon by infra-red absorption

Proceedings of the Royal Society of London Series A - Mathematical and Physical Sciences ◽

10.1098/rspa.1965.0169 ◽

1965 ◽

Vol 287 (1408) ◽

pp. 64-88 ◽

Cited By ~ 67

Keyword(s):

Second Harmonic ◽

Force Constants ◽

Published Data ◽

Free Carrier Absorption ◽

Local Modes ◽

Pure Silicon ◽

Infra Red ◽

Carrier Absorption ◽

Experimental Problem ◽

Silicon Doped

The infra-red absorption spectrum of silicon doped with high densities of boron and phosphorus has been measured from 1 to 60 μm and at temperatures between 5 and 290 °K in order to observe the local and band mode vibrational absorption activated by these impurities. The major experimental problem, that of achieving a high degree of electrical compensation to eliminate free carrier absorption, was solved by using fast electron bombardment to introduce a controllable number of trapping centres. A series of experiments was conducted to eliminate the effects of these centres from the spectrum of the chemical impurities. The characteristic spectra of the substitutional boron and phosphorus have been analysed in detail in terms of the theory of Dawber & Elliott. For local modes activated by boron isotopes close agreement with theory has been found in number of lines, strength and frequency. From the latter it is estimated that the local force constants are weakened by less than 10 % on substituting boron for silicon in the lattice. Second harmonic lines are observed at a frequency 0.25 % less than twice that of the fundamentals. The band modes exhibit a striking in-band resonance at 0.0546 eV which was not theoretically predicted. This is attributed to phosphorus and analysis shows that the theory can give such a resonance but not with parameters associated with substitutional phosphorus and unchanged force constants. Most of the remaining features in the band modes can be interpreted satisfactorily in terms of substitutional boron but this requires some modification to published data on the density of states for pure silicon. Critical points for TO( L ), TO( X ) and LA( L ) phonons are clearly identified in the spectra.

Download Full-text

Positron annihilation study of the diffusion of oxygen in annealed silicon-doped gallium arsenide

Philosophical Magazine B ◽

10.1080/13642810208222942 ◽

2002 ◽

Vol 82 (17) ◽

pp. 1809-1815

Author(s):

A. C. Towner ◽

M. Nathwani ◽

A. S. Saleh ◽

D. P. van der Werf ◽

P. Rice-Evans

Keyword(s):

Gallium Arsenide ◽

Positron Annihilation ◽

Positron Annihilation Study ◽

Silicon Doped

Download Full-text

Exploring the Characteristics of New Structure Based on Silicon Doped Organic Blend for Photonics and Electronics Applications

Silicon ◽

10.1007/s12633-021-01258-2 ◽

2021 ◽

Author(s):

Hind Ahmed ◽

Ahmed Hashim

Keyword(s):

Silicon Doped

Download Full-text

Optical and electrical non-uniformity around dislocations in silicon doped GaAs

Materials Science and Technology ◽

10.1179/mst.1997.13.11.949 ◽

1997 ◽

Vol 13 (11) ◽

pp. 949-953 ◽

Cited By ~ 3

Author(s):

M. Tajima ◽

R. Toba ◽

N. Ishida ◽

M. Warashina

Keyword(s):

Silicon Doped

Download Full-text

Transient Photoconductivity in GaAs Films Grown by Molecular Beam Epitaxy.

MRS Proceedings ◽

10.1557/proc-145-461 ◽

1989 ◽

Vol 145 ◽

Cited By ~ 1

Author(s):

A. Werner ◽

T. D. Moustakas ◽

M. Kunst

Keyword(s):

Fast Decay ◽

Electron Hole ◽

Effective Electron ◽

Decay Channels ◽

Decay Component ◽

Transient Photoconductivity ◽

High Impurity ◽

Gaas Films ◽

Silicon Doped ◽

Hole Recombination

AbstractHahn-Meitner-Institut, D-1000 Berlin 39, W. Germany Abstract The transient photoconductivity, in MBE grown silicon doped GaAs films, was studied by a contactless microwave conductivity technique. The dark carrier concentration of the investigated films varies from 4 x 1014 cm-3 to 6 x 1017 cm-3. At least two decay channels can be distinguished. An initial fast decay process (t<20 ns), which is excitation intensity dependent, followed by a slower one. The fast decay is tentativly identified with a direct electron-hole recombination and is more pronounced at high excitation intensities and in low impurity materials. The slower decay component is characterized by effective electron lifetimes ranging from 2 µs for low impurity fims up to 100 µs for high impurity samples. It can be concluded that an increase of the Si-concentration leads to an increase in the concentration of hole traps, which quenches the initial electron-hole recombination and decreases the electron decay rate in the microsecond region.

Download Full-text