The impacts of electric and magnetic field on the binding energy of hydrogenic donor impurity in a InGaAsP/InP ring-shaped quantum well wire

2018 ◽  
Vol 92 (11) ◽  
pp. 1389-1395 ◽  
Author(s):  
M. Hu ◽  
H-L Wang ◽  
Q. Gong ◽  
S-M Wang
2004 ◽  
Vol 11 (04n05) ◽  
pp. 411-417 ◽  
Author(s):  
E. KASAPOGLU ◽  
H. SARI ◽  
U. YESILGÜL ◽  
I. SÖKMEN

Using a variational approach, we have calculated the impurity position dependence of the photoionizaton cross-section and the binding energy for a hydrogenic donor impurity in a quantum well wire in the presence of the electric and magnetic field as a function of the photon energy. Our calculations have revealed the dependence of the photoionizaton cross-section and the impurity binding on the applied electric and magnetic field, and the impurity position.


2013 ◽  
Vol 380-384 ◽  
pp. 4841-4844 ◽  
Author(s):  
Guang Xin Wang ◽  
Xiu Zhi Duan

The binding energy of a hydrogenic donor impurity in cylindrical GaAs quantum ring (QR) subjected to an external magnetic field is calculated within the effect mass approximation using variational method. The binding energy as a function of the QR size (the inner radius, the outer radius), the impurity position and the applied magnetic field is investigated. The results demonstrate that the ground state binding energy behaves as an decreasing function of the outer radius, and the magnetic field. Likewise, the binding energy is an increasing function of the inner radius. The binding energy firstly increases and then decreases with shifting the impurity ion from the internal surface of the QR to the external surface, indicating that there is a maximum.


2009 ◽  
Vol 4 (11) ◽  
pp. 1315-1318 ◽  
Author(s):  
Jun Wang ◽  
Shu-Shen Li ◽  
Yan-Wu Lü ◽  
Xiang-Lin Liu ◽  
Shao-Yan Yang ◽  
...  

2009 ◽  
Vol 1 (3) ◽  
pp. 422-429 ◽  
Author(s):  
A. J. Peter ◽  
N. Radhakrishnan

The ground state of a polaron bound to hydrogen like donor impurity is investigated by considering the effect of bulk Longitudinal-Optical (LO) phonon. Donor binding energy of a hydrogenic donor, with the inclusion of electron-phonon interaction is computed for the low-dimensional semiconducting systems like quantum well, quantum well wire and quantum dot taking GaAs/AlxGa1-xAs systems as an example. Calculations are performed using a variational approach within the single band effective mass approximation. The results show that the polaronic effect is more pronounced for the lowest confinement. The polaronic effect enhances the donor binding energy but it diminishes when the well width, wire radius and dot radius become larger. Also the numerical calculations reveal that the influences of phonons on donor are considerable and should not be neglected especially for narrow dimensions in all the three confinements.Keywords: Donor binding energy; Polaronic effect; Quantum dot; Quantum wire; Quantum well.© 2009 JSR Publications. ISSN: 2070-0237 (Print); 2070-0245 (Online). All rights reserved.DOI: 10.3329/jsr.v1i3.2529            J. Sci. Res. 1 (3), 422- 429 (2009)


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