Understanding the evolution of mining-induced fractures using physical and numerical modeling

Silicon is believed to be an almost perfectly brittle material with cleavage occurring on {111} planes. In such a material at room temperature cleavage is expected to occur prior to any dislocation nucleation. This behavior suggests that cleavage fracture may be used to produce usable flat surfaces. Attempts to show this have failed. Such fractures produced in semiconductor silicon tend to occur on planes of variable orientation resulting in surfaces with a poor surface finish. In order to learn more about the mechanisms involved in fracture of silicon we began a HREM study of hardness indent induced fractures in thin samples of oxidized silicon.Samples of single crystal silicon were oxidized in air for 100 hours at 1000°C. Two pieces of this material were glued together and 500 μm thick cross-section samples were cut from the combined piece. The cross-section samples were indented using a Vicker's microhardness tester to produce cracks. The cracks in the samples were preserved by thinning from the back side using a combination of mechanical grinding and ion milling.

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Prediction of LPCVD silicon film microstructure from local operating conditions using numerical modeling

Journal de Physique IV (Proceedings) ◽

10.1051/jp4:1999822 ◽

1999 ◽

Vol 09 (PR8) ◽

pp. Pr8-181-Pr8-188 ◽

Cited By ~ 1

Author(s):

A. Dollet ◽

B. Caussat ◽

J. P. Couderc

Keyword(s):

Numerical Modeling ◽

Silicon Film ◽

Operating Conditions ◽

Film Microstructure

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Investigation of Morphosedimentary Processes on a Schematic Louisiana Barrier Island Using Process-Based Numerical Modeling

Coastal Sediments '07 ◽

10.1061/40926(239)51 ◽

2007 ◽

Author(s):

T. Campbell ◽

B. de Sonneville ◽

L. Benedet ◽

D. J. W. Walstra ◽

C. W. Finkl

Keyword(s):

Numerical Modeling ◽

Barrier Island

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Numerical Modeling of Hurricane-Induced Extreme Wave Heights in Pensacola Bay

Coastal Hazards ◽

10.1061/9780784412664.007 ◽

2013 ◽

Author(s):

Wenrui Huang ◽

Yuan He ◽

Shuguang Liu

Keyword(s):

Numerical Modeling ◽

Extreme Wave ◽

Wave Heights

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SIMULATION OF ELECTRICAL MONITORING OF DAMS WITH LEAKAGE WITH A TRANSVERSE PLACEMENT OF THE MEASURING INSTALLATION

Eurasian Journal of Mathematical and Computer Applications ◽

10.32523/2306-6172-2020-8-4-69-82 ◽

2020 ◽

Vol 8 (4) ◽

pp. 69-82

Author(s):

D.S. Rakisheva ◽

◽

B.G. Mukanova ◽

I.N. Modin ◽

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...

Keyword(s):

Numerical Modeling ◽

Water Level ◽

Electrical Resistivity Tomography ◽

Resistivity Tomography ◽

Measuring Installation ◽

Basic Functions ◽

Tomography Method ◽

Dam Monitoring ◽

The Mathematical Model ◽

Measurement Line

Numerical modeling of the problem of dam monitoring by the Electrical Resistivity Tomography method is carried out. The mathematical model is based on integral equations with a partial Fourier transform with respect to one spatial variable. It is assumed that the measurement line is located across the dam longitude. To approximate the shape of the dam surface, the Radial Basic Functions method is applied. The influence of locations of the water-dam, dam-basement, basement-leakage boundaries with respect to the sounding installation, which is partially placed under the headwater, is studied. Numerical modeling is carried out for the following varied parameters: 1) water level at the headwater; 2) the height of the leak; 3) the depth of the leak; 4) position of the supply electrode; 5) water level and leaks positions are changing simultaneously. Modeling results are presented in the form of apparent resistivity curves, as it is customary in geophysical practice.

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