Correction to: Synthesis and Characterization of Plasma-Polymer Gate Dielectric Films for Graphene Field Effect Transistor Devices

Abstract The solution-gate graphene field effect transistor (Sg-GFET), as a popular sensing platform, its applications are still hindered by the deficiency in all-solid-state, due to the dependence on liquid-state gate-dielectric. Inspired by DNA hydrogel which can provide microporous architecture to accommodate the fluidic analyte, moreover, its combination with graphene is believed to foster electron transport in the field of electrochemistry. We are interested to take advantage of DNA hydrogel's solid-state and capability for holding solution, and investigate whether it can replace the traditional solution. So pure DNA hydrogel, their complexes with GO (GO/DNA hydrogel) and RGO (RGO/DNA hydrogel) are studied herein. Their micro-porous 3D morphologies are demonstrated, their influences on the electrical characteristics of GFETs are carefully examined and proved to be able to maintain the typical bipolarity of Sg-GFET, firstly. Then, pure DNA hydrogel and GO/DNA hydrogel are selected as the optimized gate-dielectrics, because of their renewability after dehydration. Furthermore, by using aptamer-based heavy metal ions (Pb2+ and Hg2+) detections as proof-of-concept, the strategies for building the sensing platform based on the optimized hydrogel dielectric-gated GFETs are studied. It is found, for the purpose of substituting fluidic dielectric in traditional Sg-GFET, the scheme of directly mounting aptamer on graphene channel and coating pure DNA hydrogel on it is demonstrated to be better than the strategies of using GO/DNA hydrogel and hybriding aptamer probes in hydrogel scaﬀold. It is explained according to surface charge sensing mechanism. At last, the performances of the sensing platform based on the proposed DNA hydrogel gated GFETs are testified by the detections and selectivity examinations for Pb2+ and Hg2+. Conclusively, pure DNA hydrogel is expected to be a promising candidate in the future all-solid-state Sg-GFET.

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Fabrication and Characterization of Graphene Field Effect Transistor: Study of Interfacial Effects for Device Reliability

Journal of Nano Research ◽

10.4028/www.scientific.net/jnanor.36.8 ◽

2015 ◽

Vol 36 ◽

pp. 8-15

Author(s):

Neetu Prasad ◽

Anita Kumari ◽

P.K. Bhatnagar ◽

P.C. Mathur

Keyword(s):

Work Function ◽

Field Effect ◽

Field Effect Transistor ◽

Interfacial Effects ◽

Small Series ◽

Increase With Increase ◽

Graphene Field Effect Transistor ◽

Effect Transistor ◽

Mos Device

In the present work, we report fabrication and electrical characterization of a back gated graphene field effect transistor (GFET). We have focused our study on the interfacial effect (graphene/SiO2) on the performance of the device. Hysteresis was observed in the drain conductance when measured with respect to dual gate sweep voltage, which increases with increasing sweeping voltage range. The conductance was observed to increase with increase in temperature but there was no reduction in the hysteresis. This proved that temperature annealing could improve the channel conductivity but not the interfacial effects. Further, a metal oxide semiconductor (MOS) device was fabricated with SLG inserted in between the metal and oxide layer and its capacitance-voltage (C-V) characteristics were studied. A small series capacitance (2.1 nF) was observed to be existing in series with the oxide capacitance (4.5 nF) which was attributed to the trap states at the interface of graphene and SiO2 layer. Also, the flat band voltage was not affected by the incorporation of graphene layer in the MOS device indicating no change in the work function of the metal gate (Cr/Au). This is an advantageous situation where graphene does not alter its work function also being impermeable, restricts the diffusion of metal particles through the SiO2.

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