DNA hydrogel to improve solution-gate graphene field effect transistor in all-solid-state

2021 ◽  
Vol 16 (12) ◽  
pp. P12034
Author(s):  
S. Hu ◽  
Y. Jia

Abstract The solution-gate graphene field effect transistor (Sg-GFET), as a popular sensing platform, its applications are still hindered by the deficiency in all-solid-state, due to the dependence on liquid-state gate-dielectric. Inspired by DNA hydrogel which can provide microporous architecture to accommodate the fluidic analyte, moreover, its combination with graphene is believed to foster electron transport in the field of electrochemistry. We are interested to take advantage of DNA hydrogel's solid-state and capability for holding solution, and investigate whether it can replace the traditional solution. So pure DNA hydrogel, their complexes with GO (GO/DNA hydrogel) and RGO (RGO/DNA hydrogel) are studied herein. Their micro-porous 3D morphologies are demonstrated, their influences on the electrical characteristics of GFETs are carefully examined and proved to be able to maintain the typical bipolarity of Sg-GFET, firstly. Then, pure DNA hydrogel and GO/DNA hydrogel are selected as the optimized gate-dielectrics, because of their renewability after dehydration. Furthermore, by using aptamer-based heavy metal ions (Pb2+ and Hg2+) detections as proof-of-concept, the strategies for building the sensing platform based on the optimized hydrogel dielectric-gated GFETs are studied. It is found, for the purpose of substituting fluidic dielectric in traditional Sg-GFET, the scheme of directly mounting aptamer on graphene channel and coating pure DNA hydrogel on it is demonstrated to be better than the strategies of using GO/DNA hydrogel and hybriding aptamer probes in hydrogel scaffold. It is explained according to surface charge sensing mechanism. At last, the performances of the sensing platform based on the proposed DNA hydrogel gated GFETs are testified by the detections and selectivity examinations for Pb2+ and Hg2+. Conclusively, pure DNA hydrogel is expected to be a promising candidate in the future all-solid-state Sg-GFET.

2013 ◽  
Vol 5 (14) ◽  
pp. 6443-6446 ◽  
Author(s):  
Kaliannan Thiyagarajan ◽  
Balasubramaniam Saravanakumar ◽  
Rajneesh Mohan ◽  
Sang-Jae Kim

Small ◽  
2017 ◽  
Vol 14 (9) ◽  
pp. 1703035 ◽  
Author(s):  
Joong Gun Oh ◽  
Kwanyong Pak ◽  
Choong Sun Kim ◽  
Jae Hoon Bong ◽  
Wan Sik Hwang ◽  
...  

2013 ◽  
Vol 103 (2) ◽  
pp. 023113 ◽  
Author(s):  
Wenwu Li ◽  
Song-Lin Li ◽  
Katsuyoshi Komatsu ◽  
Alex Aparecido-Ferreira ◽  
Yen-Fu Lin ◽  
...  

2011 ◽  
Vol 50 (7R) ◽  
pp. 070107 ◽  
Author(s):  
Myung-Ho Jung ◽  
Hiroyuki Handa ◽  
Ryota Takahashi ◽  
Hirokazu Fukidome ◽  
Tetsuya Suemitsu ◽  
...  

2021 ◽  
Vol 271 ◽  
pp. 04045
Author(s):  
Yunfang Jia ◽  
Jizhao Zhang ◽  
Qingjie Fan

The detection of DNA methylation is necessary for the research of epigenetics. In this work we would like to propose a disposable DNA methylation sensor by using graphene field effect transistor (GFET) as the sensing platform. In this component, the liquid-phase exfoliated graphene (LEG) nanosheets were drop-coated on the flexible substrates of polyethylene terephthalate (PET) films. Then, the interdigital structured electrodes (named as source and drain) were printed on the LEG coated PET films to form the expected GFETs. Thirdly, the carbon dots (CDs) decoration was conducted and examined on the asprepared GFETs to evaluate the influence of CDs, as well as optimize CDs’ concentration. At last, the immune identification-based sensing strategy was utilized on the CDs modified GFETs to develop the concerned DNA methylation sensor. The experimental data indicate the proposed sensors could be a potential experimental tool for epigenetic research.


2021 ◽  
Vol 127 (6) ◽  
Author(s):  
Meshal Alzaid ◽  
Muhammad Zahir Iqbal ◽  
Syed Shabhi Haider ◽  
Sana Zakar ◽  
Sana Khan ◽  
...  

2020 ◽  
Vol 37 (2) ◽  
pp. 103-107
Author(s):  
Piotr Firek ◽  
Jakub Szarafiński ◽  
Grzegorz Głuszko ◽  
Jan Szmidt

Purpose The purpose of this study is to directly measure and determine the Si/SiO2/AlOxNy interface state density on metal insulator semiconductor field effect transistor (MISFET) structures. The primary advantage of using aluminum oxynitride (AlOxNy) is the perfectly controlled variability of the properties of these layers depending on their stoichiometry, which can be easily controlled by the parameters of the magnetron sputtering process. Therefore, a continuous spectrum of properties can be achieved from the specific values for oxide to the specific ones for nitride, thus opening a wide range of applications in high power, high temperature and high frequency electronics, optics and sensors and even acoustic devices. Design/methodology/approach The basic subject of this study is n-channel transistors manufactured using silicon with 50-nm-thick AlOxNy films deposited on a silicon dioxide buffer layer via magnetron sputtering in which the gate dielectric was etched with wet solutions and/or dry plasma mixtures. Furthermore, the output, transfer and charge pumping (CP) characteristics were measured and compared for all modifications of the etching process. Findings An electrical measurement of MISFETs with AlOxNy gate dielectrics was conducted to plot the current-voltage and CP characteristics and examine the influence of the etching method on MISFET parameters. Originality/value In this report, a flat band and threshold voltage and the density of interface traps were determined to evaluate and improve an AlOxNy-based MISFET performance toward highly sensitive field effect transistors for hydrogen detection by applying a Pd-based nanocrystalline layer. The sensitivity of the detectors was highly correlated with the quality of the etching process of the gate dielectrics.


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