A High-Performance Top-Gated Graphene Field-Effect Transistor with Excellent Flexibility Enabled by an iCVD Copolymer Gate Dielectric

Small ◽  
2017 ◽  
Vol 14 (9) ◽  
pp. 1703035 ◽  
Author(s):  
Joong Gun Oh ◽  
Kwanyong Pak ◽  
Choong Sun Kim ◽  
Jae Hoon Bong ◽  
Wan Sik Hwang ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Gate Dielectric ◽  
Graphene Field Effect Transistor ◽  
Effect Transistor

Optimal design for a high performance H-JLTFET using HfO2 as a gate dielectric for ultra low power applications

RSC Advances ◽  
2014 ◽  
Vol 4 (43) ◽  
pp. 22803-22807 ◽  
Author(s):  
Pranav Kumar Asthana ◽  
Bahniman Ghosh ◽  
Shiromani Bal Mukund Rahi ◽  
Yogesh Goswami
Keyword(s):  
Optimal Design ◽  
Low Power ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Gate Dielectric ◽  
Ultra Low Power ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor

In this paper we have proposed an optimal design for a hetero-junctionless tunnel field effect transistor using HfO2 as a gate dielectric.

Self-Induced Gate Dielectric for Graphene Field-Effect Transistor

2013 ◽  
Vol 5 (14) ◽  
pp. 6443-6446 ◽  
Author(s):  
Kaliannan Thiyagarajan ◽  
Balasubramaniam Saravanakumar ◽  
Rajneesh Mohan ◽  
Sang-Jae Kim
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Gate Dielectric ◽  
Graphene Field Effect Transistor ◽  
Effect Transistor

Engineering gate dielectric surface properties for enhanced polymer field-effect transistor performance

2015 ◽  
Vol 3 (47) ◽  
pp. 12267-12272 ◽  
Author(s):  
Yanlian Lei ◽  
Bo Wu ◽  
Wing-Kin Edward Chan ◽  
Furong Zhu ◽  
Beng S. Ong
Keyword(s):  
Surface Properties ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Gate Dielectric ◽  
High Mobility ◽  
Dielectric Surface ◽  
Effect Transistor

A high-performance “hybrid” dual-silane SAM enables the attainment of both a high mobility and on/off ratio, together with other desirable FET properties.

Detection of MicroRNA Based on Three-Dimensional Graphene Field-Effect Transistor Biosensor

NANO ◽  
2020 ◽  
Vol 15 (03) ◽  
pp. 2050039
Author(s):  
Ruihong Song ◽  
Meng Tian ◽  
Yingxian Li ◽  
Jianjian Liu ◽  
Guofeng Liu ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Nickel Foam ◽  
Three Dimensional ◽  
Chemical Vapor ◽  
Current Response ◽  
Promising Alternative ◽  
Graphene Field Effect Transistor ◽  
Effect Transistor

MicroRNA (miRNAs) are post-transcriptional gene regulators and can be easily detected in plasma, which suggests a promising role as diagnostic markers. In this paper, we reported a nanomaterial of three-dimensional graphene (3D-G) grown on nickel foam by chemical vapor deposition (CVD). As a conductive channel, the 3D-G was made into field-effect transistor (FET) biosensor, showing high-performance in detecting of miRNA. We demonstrated that 3D-G FET biosensor was able to achieve a detection limit as low as 100[Formula: see text]pM and also has a good linear current response to miRNA concentrations in a broad range from 100[Formula: see text]pM to 100[Formula: see text]nM. Overall, the 3D-G FET biosensor was shown as a very promising alternative tool for the detection of miRNAs in biomedical research and early clinical diagnostic studies.

High-performance portable graphene field-effect transistor device for detecting Gram-positive and -negative bacteria

2020 ◽  
Vol 167 ◽  
pp. 112514 ◽  
Author(s):  
Kyung Ho Kim ◽  
Seon Joo Park ◽  
Chul Soon Park ◽  
Sung Eun Seo ◽  
Jiyeon Lee ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Gram Positive ◽  
Graphene Field Effect Transistor ◽  
Effect Transistor

DNA hydrogel to improve solution-gate graphene field effect transistor in all-solid-state

2021 ◽  
Vol 16 (12) ◽  
pp. P12034
Author(s):  
S. Hu ◽  
Y. Jia
Keyword(s):  
Solid State ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Gate Dielectric ◽  
Gate Dielectrics ◽  
Hydrogel Scaffold ◽  
Sensing Platform ◽  
Graphene Field Effect Transistor ◽  
Effect Transistor ◽  
Dna Hydrogel

Abstract The solution-gate graphene field effect transistor (Sg-GFET), as a popular sensing platform, its applications are still hindered by the deficiency in all-solid-state, due to the dependence on liquid-state gate-dielectric. Inspired by DNA hydrogel which can provide microporous architecture to accommodate the fluidic analyte, moreover, its combination with graphene is believed to foster electron transport in the field of electrochemistry. We are interested to take advantage of DNA hydrogel's solid-state and capability for holding solution, and investigate whether it can replace the traditional solution. So pure DNA hydrogel, their complexes with GO (GO/DNA hydrogel) and RGO (RGO/DNA hydrogel) are studied herein. Their micro-porous 3D morphologies are demonstrated, their influences on the electrical characteristics of GFETs are carefully examined and proved to be able to maintain the typical bipolarity of Sg-GFET, firstly. Then, pure DNA hydrogel and GO/DNA hydrogel are selected as the optimized gate-dielectrics, because of their renewability after dehydration. Furthermore, by using aptamer-based heavy metal ions (Pb2+ and Hg2+) detections as proof-of-concept, the strategies for building the sensing platform based on the optimized hydrogel dielectric-gated GFETs are studied. It is found, for the purpose of substituting fluidic dielectric in traditional Sg-GFET, the scheme of directly mounting aptamer on graphene channel and coating pure DNA hydrogel on it is demonstrated to be better than the strategies of using GO/DNA hydrogel and hybriding aptamer probes in hydrogel scaffold. It is explained according to surface charge sensing mechanism. At last, the performances of the sensing platform based on the proposed DNA hydrogel gated GFETs are testified by the detections and selectivity examinations for Pb2+ and Hg2+. Conclusively, pure DNA hydrogel is expected to be a promising candidate in the future all-solid-state Sg-GFET.

Realization of graphene field-effect transistor with high-κ HCa2Nb3O10 nanoflake as top-gate dielectric

2013 ◽  
Vol 103 (2) ◽  
pp. 023113 ◽  
Author(s):  
Wenwu Li ◽  
Song-Lin Li ◽  
Katsuyoshi Komatsu ◽  
Alex Aparecido-Ferreira ◽  
Yen-Fu Lin ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Gate Dielectric ◽  
Graphene Field Effect Transistor ◽  
Effect Transistor
Sign in / Sign up

Export Citation Format

Share Document