scholarly journals Fabrication and characterization of pure and modified Co3O4 nanocatalyst and their application for photocatalytic degradation of eosine blue dye: a comparative study

2018 ◽  
Vol 8 (4) ◽  
pp. 453-463 ◽  
Author(s):  
Prashant Bhimrao Koli ◽  
Kailas Haribhau Kapadnis ◽  
Uday Gangadhar Deshpande ◽  
Manohar Rajendra Patil
Keyword(s):  
Comparative Study ◽  
Photocatalytic Degradation ◽  
Blue Dye ◽  
Fabrication And Characterization

A Comparative Study Of GaN Diodes Grown by MBE on Sapphire and HVPE-GaN /Sapphire Substrates

1999 ◽  
Vol 595 ◽  
Author(s):  
Anand V. Sampath ◽  
Mira Misra ◽  
Kshitij Seth ◽  
Yuri. Fedyunin ◽  
Hock M. Ng ◽  
...  
Keyword(s):  
Comparative Study ◽  
Reverse Bias ◽  
Schottky Diodes ◽  
Forward Bias ◽  
Etch Pits ◽  
Sapphire Substrates ◽  
Fabrication And Characterization

AbstractIn this paper we report on the fabrication and characterization of GaN diodes (Schottky and p-n junctions) grown by plasma assisted MBE. We observed that Schottky diodes improve both in reverse as well as forward bias when deposited on 5 μm thick HVPE n+-GaN/sapphire instead of bare sapphire substrates. These improvements are attributed to the reduction of disloctions in the MBE homoepitaxially grown GaN. Similar benefits are observed in the reverse bias of the p-n junctions which according to EBIC measurements are attributed to the reduction of etch pits in the MBE grown p-GaN.

scholarly journals A Comparative Study Of GaN Diodes Grown by MBE on Sapphire and HVPE-GaN /Sapphire Substrates

2000 ◽  
Vol 5 (S1) ◽  
pp. 577-583
Author(s):  
Anand V. Sampath ◽  
Mira Misra ◽  
Kshitij Seth ◽  
Yuri. Fedyunin ◽  
Hock M. Ng ◽  
...  
Keyword(s):  
Comparative Study ◽  
Reverse Bias ◽  
Schottky Diodes ◽  
Forward Bias ◽  
Etch Pits ◽  
Sapphire Substrates ◽  
Fabrication And Characterization

In this paper we report on the fabrication and characterization of GaN diodes (Schottky and p-n junctions) grown by plasma assisted MBE. We observed that Schottky diodes improve both in reverse as well as forward bias when deposited on 5 μm thick HVPE n+-GaN/sapphire instead of bare sapphire substrates. These improvements are attributed to the reduction of disloctions in the MBE homoepitaxially grown GaN. Similar benefits are observed in the reverse bias of the p-n junctions which according to EBIC measurements are attributed to the reduction of etch pits in the MBE grown p-GaN.

Fabrication and characterization of chitosan film impregnated ciprofloxacin drug: A comparative study

2019 ◽  
Vol 18 ◽  
pp. 101078 ◽  
Author(s):  
Hanumant Singh Rathore ◽  
T. Senthilvelan ◽  
Raguraman Vasantharaja ◽  
L. Stanley Abraham ◽  
Dhanasekaran Prakash ◽  
...  
Keyword(s):  
Comparative Study ◽  
Chitosan Film ◽  
Fabrication And Characterization

Fabrication and characterization of ZnO particles with different morphologies for photocatalytic degradation of pentachlorophenol

2013 ◽  
Vol 40 (5) ◽  
pp. 1937-1946 ◽  
Author(s):  
Juan Xie ◽  
Yong Jing Hao ◽  
Zhao Zhou ◽  
Xiao Cai Meng ◽  
Lan Yao ◽  
...  
Keyword(s):  
Photocatalytic Degradation ◽  
Zno Particles ◽  
Fabrication And Characterization
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