scholarly journals Compositional modulation in ZnGa2O4 via Zn2+/Ge4+ co-doping to simultaneously lower sintering temperature and improve microwave dielectric properties

2021 ◽  
Author(s):  
Ying Xiong ◽  
Hongyuan Xie ◽  
Zhenggang Rao ◽  
Laijun Liu ◽  
Zhengfeng Wang ◽  
...  
Keyword(s):  
Dielectric Properties ◽  
Quality Factor ◽  
Spinel Structure ◽  
High Speed ◽  
Sintering Temperature ◽  
Microwave Dielectric Properties ◽  
Signal Propagation ◽  
Solid State Method ◽  
Co Doping ◽  
Microwave Dielectric

AbstractAB2O4-type spinels with low relative permittivity (εr) and high quality factor (Q × f) are crucial to high-speed signal propagation systems. In this work, Zn2+/Ge4+ co-doping to substitute Ga3+ in ZnGa2O4 was designed to lower the sintering temperature and adjust the thermal stability of resonance frequency simultaneously. Zn1+xGa2−2xGexO4 (0.1 ⩽ x ⩽ 0.5) ceramics were synthesised by the conventional solid-state method. Zn2+/Ge4+ co-substitution induced minimal variation in the macroscopical spinel structure, which effectively lowered the sintering temperature from 1385 to 1250 °C. All compositions crystallized in a normal spinel structure and exhibited dense microstructures and excellent microwave dielectric properties. The compositional dependent quality factor was related to the microstructural variation, being confirmed by Raman features. A composition with x = 0.3 shows the best dielectric properties with εr ≈ 10.09, Q × f ≈ 112,700 THz, and τf ≈ −75.6 ppm/°C. The negative τf value was further adjusted to be near-zero through the formation of composite ceramics with TiO2.

Low Temperature Sintering and Microwave Dielectric Properties of Zinc Titanate Ceramics for LTCC Applications

2008 ◽  
Vol 368-372 ◽  
pp. 179-182
Author(s):  
Zong Chi Liu ◽  
Dong Xiang Zhou ◽  
Shu Ping Gong
Keyword(s):  
Dielectric Properties ◽  
Sintering Temperature ◽  
Microwave Dielectric Properties ◽  
Sintering Behavior ◽  
Solid State Method ◽  
Zinc Titanate ◽  
Microwave Dielectric ◽  
Conventional Solid State Method ◽  
State Method ◽  
Titanate Ceramics

The effects of CuO-MoO3 addition on the sintering behavior and microwave dielectric properties of ZnO-TiO2 ceramics were investigated. ZnO-TiO2 ceramics were prepared with conventional solid-state method and sintered at temperatures from 850 to 1050 °C. The sintering temperature of ZnO-TiO2 ceramics with CuO-MoO3 addition could be effectively reduced to 950 °C due to the liquid phase effects resulting from the additives. A proper amount of CuO-MoO3 addition could effectively improve the densification and microwave dielectric properties of ZnO-TiO2 ceramics. ZnO-TiO2 ceramics with 3 wt% addition sintered at 950 °C for 4 h exhibited better microwave dielectric properties as follows: εr of 26.8, a Q×f value of 16780 GHz at 5.42 GHz, and a τ f value of +34.7 ppm/°C.

Low-Temperature Firing and Microwave Dielectric Properties of Zn3Nb2O8 Ceramics with CuO-V2O5-Bi2O3

2010 ◽  
Vol 434-435 ◽  
pp. 224-227
Author(s):  
Xu Ping Lin ◽  
Jing Tao Ma ◽  
Bao Qing Zhang ◽  
Ji Zhou
Keyword(s):  
Dielectric Constant ◽  
Phase Composition ◽  
Dielectric Properties ◽  
Relative Density ◽  
Sintering Temperature ◽  
Microwave Dielectric Properties ◽  
Sintering Behavior ◽  
Co Doping ◽  
Microwave Dielectric ◽  
Quality Factor Q

The influence of CuO-V2O5-Bi2O3 addition on the sintering behavior, phase composition, microstructure and microwave dielectric properties of Zn3Nb2O8 ceramics were investigated. The co- doping of CuO, V2O5 and Bi2O3 can significantly lower the sintering temperature of Zn3Nb2O8 ceramics from 1150°C to 900°C. The Zn3Nb2O8-0.5wt% CuO-0.5wt% V2O5-2.0wt% Bi2O3 ceramic sintered at 900°C showed a relative density of 97.1%, a dielectric constant (εr) of 18.2, and a quality factor (Q×f) of 36781 GHz. The dielectric properties in this system exhibited a significant dependence on the relative density, content of additives and sintering temperature. The relative density and dielectric constant (εr) of Zn3Nb2O8 ceramics increased with increasing CuO-V2O5-Bi2O3 additions. And also the relative density and dielectric constant of Zn3Nb2O8 ceramics increased by the augment of the sintering temperature.

Effects of CuO and V2O5 Addition on Sintering Behavior and Microwave Dielectric Properties of (1-x)Ca2P2O7-xTiO2

2007 ◽  
Vol 336-338 ◽  
pp. 279-282
Author(s):  
In Sun Cho ◽  
Sang Gu Kang ◽  
Dong Wan Kim ◽  
Kug Sun Hong
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Resonant Frequency ◽  
Temperature Coefficient ◽  
Quality Factor ◽  
Sintering Temperature ◽  
Microwave Dielectric Properties ◽  
Sintering Behavior ◽  
Microwave Dielectric

The effects of CuO and V2O5 addition on sintering behaviors and microwave dielectric properties of 0.7Ca2P2O7-0.3TiO2 ceramics were investigated. With CuO and V2O5 addition, the sintering temperature of 0.7Ca2P2O7-0.3TiO2 can be effectively reduced from 1150 to 950oC. The dielectric constant of the low fired 0.7Ca2P2O7-0.3TiO2 ceramics was not significantly changed while the quality factor was affected by additives. The temperature coefficient of resonant frequency value was increased in negative value with the additive contents. V2O5 and CuO additives effectively improved the densification and dielectric properties of 0.7Ca2P2O7-0.3TiO2 ceramics. The correlation between the phase constituents and the dielectric properties was investigated with additive contents.

Effect of Sintering Temperature on CuO Doped Barium Zinc Tantalate (BZT) Dielectric Properties

2016 ◽  
Vol 840 ◽  
pp. 8-13
Author(s):  
Hidayani Jaafar ◽  
Zainal Arifin Ahmad ◽  
Mohd Fadzil Ain
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Relative Density ◽  
Sintering Temperature ◽  
Microwave Dielectric Properties ◽  
Solid State Method ◽  
Microwave Dielectric ◽  
Constant E ◽  
State Method ◽  
Tan Δ

The structure and dielectric properties of Barium Zinc Tantalate (BZT) doped by copper oxide (CuO) with a variety of values of mol% doping from 0, 0.1, 0.25, 1.0, 1.5 and 2.5 were prepared using a solid state method. The addition of CuO did not disturb the 1:2 ordering structure of the BZT ceramic. The grain size increased when the addition of doping increased. A small amount of doping elements increased the relative density. The dielectric constant (ɛr) value of the BZT significantly improved with the addition of the CuO for the specimens sintered at 1250°C and it could be explained by the increase of the relative density. The tan δ of the CuO doped with BZT ceramics is lower than pure BZT ceramics, and decreases as the CuO content increases. Meanwhile, for the percentage of bandwidth (%BW) it is shown that the best result is produced when it is doped with 0.25 mol% CuO and sintered at 1250°C. The best microwave dielectric properties obtained were ɛr=70.28, tan δ = 0.024, %BW = 7.83 which occurred for the 0.25 mol% doped CuO and when sintered at 1250°C/4 h.

Effects of ZnO Addition and Sintering Temperature on Dielectric Properties of MgTiO3 Ceramic

2014 ◽  
Vol 616 ◽  
pp. 145-152 ◽  
Author(s):  
Xiao Li Ji ◽  
Fang Yi ◽  
Song Zhang ◽  
Cheng C. Zhai ◽  
Peng Fei Hu
Keyword(s):  
Dielectric Properties ◽  
Dielectric Loss ◽  
Quality Factor ◽  
Glass Phase ◽  
Sintering Temperature ◽  
Microwave Dielectric Properties ◽  
Microwave Dielectric ◽  
Wide Range ◽  
Porosity Defects

The effects of ZnO addition and sintering temperature on dielectric properties of MgTiO3 ceramics were investigated. The results showed that addition ZnO not only reduce the sintering temperature but also improve the density and dielectric properties of MgTiO3 ceramics. (Mg1-xZnx)TiO3 (MZT) ceramics shows microwave dielectric properties in a wide range of sintering temperature when x = 0.1, 0.2, 0.3. At x ≥ 0.4, the density of ceramics decreased and porosity, defects and glass phase increased with increased doping of ZnO, resulting in the increase of dielectric loss of MZT and reduce of quality factor.

Effects of Sintering Temperatures on Microwave Properties of Mg4Nb2O9 Ceramics by the Solid-State Process

2012 ◽  
Vol 499 ◽  
pp. 178-182
Author(s):  
Yi Shan Jiang ◽  
Ying Zi Wang ◽  
Ya Ming Chen ◽  
Yun Long Yue ◽  
Hai Tao Wu
Keyword(s):  
Dielectric Properties ◽  
Solid State ◽  
Sintering Temperature ◽  
Microwave Dielectric Properties ◽  
Microwave Dielectric Ceramics ◽  
Solid State Method ◽  
Microwave Dielectric ◽  
State Process ◽  
Density Values ◽  
Dielectric Ceramics

Microwave dielectric ceramics of Mg4Nb2O9were prepared by the solid-state method and their microwave dielectric properties and microstructure were investigated in this study. The sintering ability and microwave dielectric properties of Mg4Nb2O9ceramics were studied under various sintering temperatures ranging from 1200°C to 1350°C. As the sintering temperature increased from 1200°C to 1350°C, the density values, the εr values and the Q·ƒ values increased and saturated at 1350°C.The ƒ values were ranged from -48.7 to -57.8 ppm/°C. Due to the increased density and appropriate grain growth the Mg4Nb2O9ceramics sintered at 1350°C had the excellent microwave dielectric properties of εr=12.3, Q·ƒ =108,000GHz and ƒ=-55.3ppm/°C.

Tuning the Microwave Dielectric Properties of Nd0.96Yb0.04(Mg0.5Sn0.5)O3 by Introducing Ca0.8Sr0.2TiO3

2015 ◽  
Vol 1119 ◽  
pp. 451-455
Author(s):  
Yih Chien Chen ◽  
Chih Hung Li ◽  
Hua Xian Liu ◽  
Jing Yu Fu
Keyword(s):  
Dielectric Properties ◽  
Sintering Temperature ◽  
Microwave Dielectric Properties ◽  
X Ray Diffraction ◽  
Ceramic System ◽  
Solid State Method ◽  
X Ray ◽  
Microwave Dielectric ◽  
Conventional Solid State Method ◽  
Diffraction Patterns

The influence of sintering temperature on the microwave dielectric properties and microstructure of the (1-y)Nd0.96Yb0.04(Mg0.5Sn0.5)O3-yCa0.8Sr0.2TiO3 ceramic system were investigated with a view to their application in microwave devices. The (1-y)Nd0.96Yb0.04(Mg0.5Sn0.5)O3-yCa0.8Sr0.2TiO3 ceramic systems were prepared using the conventional solid-state method. The X-ray diffraction patterns of the (1-y)Nd0.96Yb0.04(Mg0.5Sn0.5)O3-yCa0.8Sr0.2TiO3 ceramic system shifted to higher angle as y increased. A dielectric constant of 38.2, a quality factor (Q×f) of 53,500 GHz, and a temperature coefficient of resonant frequency of-3 ppm/°Cwere obtained when the 0.4 Nd0.96Yb0.04(Mg0.5Sn0.5)O3–0.6Ca0.8Sr0.2TiO3 ceramic system was sintered at 1600 °C for 4h.

Effect of BaCu(B2O5) on the sintering temperature and microwave dielectric properties of Ba(Nd0.8Bi0.2)2Ti4O12 ceramics

2010 ◽  
Vol 25 (12) ◽  
pp. 2380-2383 ◽  
Author(s):  
Yi Zeng ◽  
Hong Wang ◽  
Huanfu Zhou
Keyword(s):  
Dielectric Properties ◽  
Low Temperature ◽  
Resonant Frequency ◽  
Temperature Coefficient ◽  
Quality Factor ◽  
Sintering Temperature ◽  
Microwave Dielectric Properties ◽  
Potential Candidate ◽  
Microwave Dielectric ◽  
Quality Factor Q

The effect of BaCu(B2O5) (BCB) on the sintering temperature and microwave dielectric properties of Ba(Nd0.8Bi0.2)2Ti4O12 (BNBT) ceramics was investigated. The sintering temperature of the BNBT ceramics was significantly reduced from 1300 to 900 °C. Due to adding BCB into Ba(Nd1–xBix)2Ti4O12, the temperature coefficient of resonant frequency can be adjusted to zero with BCB content increasing. Good microwave dielectric properties of quality factor (Q×f) = 2600 GHz, εr = 75, and τf = 5 ppm/°C were obtained for BNBT with 7 wt% BCB sintered at 925 °C for 2 h, which make it a potential candidate for low temperature cofired ceramics applications.

Effect of CuO on Microstructure and Microwave Dielectric Properties of CaTiO3-Ca(Zn1/3Nb2/3)O3 Ceramics System

2006 ◽  
Vol 966 ◽  
Author(s):  
Hongtao Yu ◽  
Hua Hao ◽  
Hanxing Liu ◽  
Zhongqing Tian
Keyword(s):  
Dielectric Properties ◽  
Quality Factor ◽  
Sintering Temperature ◽  
Microwave Dielectric Properties ◽  
Microwave Dielectric ◽  
Orthorhombic Perovskite ◽  
Significant Change

ABSTRACTThe effect of CuO on the microstructure and microwave dielectric properties of the CaTiO3-Ca(Zn1/3Nb2/3)O3 ceramics prepared by the conventional solid-method has been investigated. Doped with the 0.5∼1.25wt% CuO powder, the system of which the sintering temperatures were lowered exhibited the orthorhombic perovskite. It can effectively promote the microwave dielectric properties of the 0.3CaTiO3-0.7Ca(Zn1/3Nb2/3)O3 system at lower sintering temperature at the level of 1.0wt% CuO additive. The quality factor increases from 10860 to 13900GHz and not any significant change was observed in the TCF value with fixed CuO additive at different sintering temperature.

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