Field-effect transistors based on intrinsic molecular semiconductors

1990 ◽  
Vol 167 (6) ◽  
pp. 503-506 ◽  
Author(s):  
Gérard Guillaud ◽  
Manaa Al Sadoun ◽  
Monique Maitrot ◽  
Jacques Simon ◽  
Marcel Bouvet
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Molecular Semiconductors

scholarly journals Trends in molecular design strategies for ambient stable n-channel organic field effect transistors

2017 ◽  
Vol 5 (30) ◽  
pp. 7404-7430 ◽  
Author(s):  
Joydeep Dhar ◽  
Ulrike Salzner ◽  
Satish Patil
Keyword(s):  
Field Effect ◽  
Molecular Design ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Design Strategies ◽  
Recent Advancement ◽  
Molecular Semiconductors

This review highlights recent advancement in developing ambient stable organic molecular semiconductors from the theoretical and experimental perspectives.

Ultralow bandgap molecular semiconductors for ambient-stable and solution-processable ambipolar organic field-effect transistors and inverters

2017 ◽  
Vol 5 (9) ◽  
pp. 2368-2379 ◽  
Author(s):  
Resul Ozdemir ◽  
Donghee Choi ◽  
Mehmet Ozdemir ◽  
Guhyun Kwon ◽  
Hyekyoung Kim ◽  
...  
Keyword(s):  
Small Molecules ◽  
Field Effect ◽  
Field Effect Transistors ◽  
High Gain ◽  
Organic Field Effect Transistors ◽  
Solution Processable ◽  
Molecular Semiconductors

New ultralow bandgap semiconductor small molecules were designed and synthesized for ambient-stable and solution-processable ambipolar organic field-effect transistors and high-gain inverters.

Naphthodithiophenediimide (NDTI)-based triads for high-performance air-stable, solution-processed ambipolar organic field-effect transistors

2015 ◽  
Vol 3 (17) ◽  
pp. 4244-4249 ◽  
Author(s):  
Jian-Yong Hu ◽  
Masahiro Nakano ◽  
Itaru Osaka ◽  
Kazuo Takimiya
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Stable Solution ◽  
Organic Field Effect Transistors ◽  
Solution Processed ◽  
Molecular Semiconductors ◽  
Triad Type

We report new NDTI-based triad-type ambipolar molecular semiconductors for high-performance air-stable, solution-processed OFETs and complementary-like inverters.

Enhancement of Charge Injection in Organic Field-Effect Transistors Through Semiconducting Organic Buffer Layer

2021 ◽  
Vol 21 (7) ◽  
pp. 3923-3928
Author(s):  
Gyujeong Lee ◽  
Hea-Lim Park ◽  
Sin-Hyung Lee ◽  
Min-Hoi Kim ◽  
Sin-Doo Lee
Keyword(s):  
Buffer Layer ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Systematic Investigation ◽  
Electrical Performance ◽  
Organic Field Effect Transistors ◽  
Semiconductor Interface ◽  
Molecular Semiconductors ◽  
Injection Barrier

We investigate the effect of a semiconducting organic buffer layer (SOBL) on the injection and transport of charges in organic field-effect transistors (OFETs). Here, two different injection barriers at the source/organic semiconductor interface are respectively studied with the aid of a numerical simulation: one is intermediate (0.4 eV), and the other is large energy barriers (0.6 eV). The introduction of nanostructure buffer layer, or SOBL, exhibits the decrease of potential loss at the contact interfaces, improving the electrical performance of the OFETs. It is also found that the energy level as well as the mobility of the SOBL plays an important role in determining the injection properties at the metal/organic hetero-interfaces and thus improving the device performance. Our systematic investigation on the injection barrier by the introduction of the nanostructure buffer layer will provide a useful guideline for the fabrication of high-performance FETs with molecular semiconductors.

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