scholarly journals Dynamic hole burning within special pair absorption band of Rhodobacter sphaeroides (R-26) reaction center at room temperature

FEBS Letters ◽  
1995 ◽  
Vol 357 (3) ◽  
pp. 239-241 ◽  
Author(s):  
A.M. Streltsov ◽  
A.G. Yakovlev ◽  
A.Ya. Shkuropatov ◽  
V.A. Shuvalov
Keyword(s):  
Absorption Band ◽  
Reaction Center ◽  
Rhodobacter Sphaeroides ◽  
Room Temperature ◽  
Hole Burning ◽  
Special Pair

Electrochemical shift of the carotenoid molecule absorption band as an indicator of processes of energy migration in the reaction center of Rhodobacter sphaeroides

2010 ◽  
Vol 434 (1) ◽  
pp. 257-261 ◽  
Author(s):  
V. Z. Paschenko ◽  
V. V. Gorokhov ◽  
B. N. Korvatovsky ◽  
P. P. Knox ◽  
N. I. Zakharova ◽  
...  
Keyword(s):  
Absorption Band ◽  
Reaction Center ◽  
Rhodobacter Sphaeroides ◽  
Energy Migration

Investigation of the V4+-Centre in 6H- and 4H-SIC by the Method of Spectral-Hole Burning

1998 ◽  
Vol 512 ◽  
Author(s):  
C. Hecht ◽  
R. Kummer ◽  
A. Winnacker
Keyword(s):  
Electronic Properties ◽  
Room Temperature ◽  
Hole Burning ◽  
Band Offset ◽  
Spectral Hole Burning ◽  
Type Ii ◽  
Thermally Stable ◽  
Spectral Hole

ABSTRACTIn the context of spectral-hole burning experiments in 4H- and 6H-SiC doped with vanadium the energy positions of the V4+/5+ level in both polytypes were determined in order to resolve discrepancies in literature. From these numbers the band offset of 6H/4H-SiC is calculated by using the Langer-Heinrich rule, and found to be of staggered type II. Furthermore the experiments show that thermally stable electronic traps exist in both polytypes at room temperature and considerably above, which may result in longtime transient shifts of electronic properties.

Room-temperature grating-based morphological hole burning in Sm^2+-doped glass powders

2003 ◽  
Vol 28 (7) ◽  
pp. 567 ◽  
Author(s):  
Koji Fujita ◽  
Yoshihiro Ohashi ◽  
Kazuyuki Hirao
Keyword(s):  
Room Temperature ◽  
Hole Burning ◽  
Doped Glass ◽  
Glass Powders
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