Extremely uniform growth of GaAs and GaAlAs by low pressure metalorganic chemical vapor deposition on three-inch GaAs substrates

1984 ◽  
Vol 70 (1-2) ◽  
pp. 140-144 ◽  
Author(s):  
A. Okamoto ◽  
H. Sunakawa ◽  
H. Terao ◽  
H. Watanabe
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Gaas Substrates ◽  
Uniform Growth ◽  
Metalorganic Chemical

Low pressure metalorganic chemical‐vapor deposition of cubic GaN over (100) GaAs substrates

1994 ◽  
Vol 65 (19) ◽  
pp. 2407-2409 ◽  
Author(s):  
J. N. Kuznia ◽  
J. W. Yang ◽  
Q. C. Chen ◽  
S. Krishnankutty ◽  
M. Asif Khan ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Gaas Substrates ◽  
Cubic Gan ◽  
Metalorganic Chemical

High-Quality InSb Growth on GaAs and Si by Low-Pressure Metalorganic Chemical Vapor Deposition

1992 ◽  
Vol 281 ◽  
Author(s):  
Y. H. Choi ◽  
R. Sudharsanan ◽  
C. Besikci ◽  
E. Bigan ◽  
M. Razeghi
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Film Growth ◽  
Chemical Vapor ◽  
Low Pressure ◽  
High Quality ◽  
Si Substrates ◽  
Gaas Substrates ◽  
Metalorganic Chemical

ABSTRACTWe report the first InSb film growth on Si by low-pressure metalorganic chemical vapor deposition. High-quality layers of InSb have been grown on Si and GaAs substrates. InSb films displayed mirror-like morphology on both substrates. X-ray full width at half maximum of 171 arcsec on GaAs and 361 arcsec on Si for a InSb layer thickness of 3.1 μm were measured. Room-temperature Hall mobilities of 67,000 and 48,000 cm2/V.s with carrier concentration of 1.5×1016 and 2.3×1016 cm−3 have been achieved for InSb films grown on GaAs and Si substrates, respectively. A 4.8 μ-thick InSb film on GaAs exhibited mobility of 76,200 cm2/Vs at 240 K.

GaInN/GaN Multi-Quantum Well Laser Diodes Grown by Low-Pressure Metalorganic Chemical Vapor Deposition

1998 ◽  
Vol 3 ◽  
Author(s):  
P. Kung ◽  
A. Saxler ◽  
D. Walker ◽  
A. Rybaltowski ◽  
Xiaolong Zhang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Quantum Well ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Multi Quantum Well ◽  
Metalorganic Chemical

We report the growth, fabrication and characterization of GaInN/GaN multi-quantum well lasers grown on (00·1) sapphire substrates by low pressure metalorganic chemical vapor deposition. The threshold current density of a 1800 μm long cavity length laser was 1.4 kA/cm2 with a threshold voltage of 25 V. These lasers exhibited series resistances of 13 and 14 Ω at 300 and 79 K, respectively.

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