Gas source molecular beam epitaxy of GaInAs(P): Gas sources, single quantum wells, superlattice p-i-n's and bipolar transistors

Journal of Crystal Growth ◽

10.1016/0022-0248(87)90401-5 ◽

1987 ◽

Vol 81 (1-4) ◽

pp. 249-260 ◽

Author(s):

M.B. Panish

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Wells ◽

Molecular Beam ◽

Bipolar Transistors ◽

Single Quantum ◽

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Optical properties of InAs1−xNx/In0.53Ga0.47As single quantum wells grown by gas source molecular beam epitaxy

Journal of Electronic Materials ◽

10.1007/s11664-003-0216-x ◽

2003 ◽

Vol 32 (4) ◽

pp. 244-248 ◽

Author(s):

Guan-Ru Chen ◽

Hao-Hsiung Lin ◽

Jyh-Shyang Wang ◽

Ding-Kang Shih

Keyword(s):

Optical Properties ◽

Molecular Beam Epitaxy ◽

Quantum Wells ◽

Molecular Beam ◽

Single Quantum ◽

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Optical properties of quantum wells grown upon gas source molecular‐beam epitaxy low‐temperature buffers

Journal of Applied Physics ◽

10.1063/1.348908 ◽

1991 ◽

Vol 69 (11) ◽

pp. 7942-7944 ◽

Author(s):

K. T. Shiralagi ◽

R. A. Puechner ◽

K. Y. Choi ◽

R. Droopad ◽

G. N. Maracas

Keyword(s):

Optical Properties ◽

Molecular Beam Epitaxy ◽

Low Temperature ◽

Quantum Wells ◽

Molecular Beam ◽

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Fully Strained Heavily Carbon-Doped GaAs Grown by Gas-Source Molecular Beam Epitaxy Using Carbontetrabromide and Its Application to InGaP/GaAs Heterojunction Bipolar Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.36.1866 ◽

1997 ◽

Vol 36 (Part 1, No. 3B) ◽

pp. 1866-1868 ◽

Author(s):

Kiyoshi Ouchi ◽

Tomoyoshi Mishima ◽

Kazuhiro Mochizuki ◽

Tohru Oka ◽

Tomonori Tanoue

Keyword(s):

Molecular Beam Epitaxy ◽

Heterojunction Bipolar Transistors ◽

Molecular Beam ◽

Bipolar Transistors ◽

Carbon Doped ◽

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Photoluminescence properties of GaNP/GaP multiple quantum wells grown by gas source molecular beam epitaxy

Applied Physics Letters ◽

10.1063/1.1313813 ◽

2000 ◽

Vol 77 (14) ◽

pp. 2180-2182 ◽

Author(s):

H. P. Xin ◽

C. W. Tu

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Wells ◽

Molecular Beam ◽

Multiple Quantum Wells ◽

Multiple Quantum ◽

Photoluminescence Properties ◽

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High performance GaAsSb∕InP double heterojunction bipolar transistors grown by gas-source molecular beam epitaxy

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.2190678 ◽

2006 ◽

Vol 24 (3) ◽

pp. 1564 ◽

Author(s):

Bing-Ruey Wu ◽

Benjamin F. Chu-Kung ◽

Milton Feng ◽

K. Y. Cheng

Keyword(s):

Molecular Beam Epitaxy ◽

Heterojunction Bipolar Transistors ◽

High Performance ◽

Molecular Beam ◽

Bipolar Transistors ◽

Double Heterojunction

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Luminescence study on interdiffusion in strained Si1−xGex/Si single quantum wells grown by molecular beam epitaxy

Applied Physics Letters ◽

10.1063/1.110725 ◽

1993 ◽

Vol 63 (12) ◽

pp. 1651-1653 ◽

Author(s):

H. Sunamura ◽

S. Fukatsu ◽

N. Usami ◽

Y. Shiraki

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Wells ◽

Molecular Beam ◽

Single Quantum ◽

Luminescence Study

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Properties of Strain Compensated Symmetrical Triangular Quantum Wells Composed of InGaAs/InAs Chirped Superlattice Grown Using Gas Source Molecular Beam Epitaxy

Chinese Physics Letters ◽

10.1088/0256-307x/25/2/101 ◽

2008 ◽

Vol 25 (2) ◽

pp. 726-729 ◽

Author(s):

Gu Yi ◽

Zhang Yong-Gang

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Wells ◽

Molecular Beam ◽

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InGaAsP/InP multiple quantum wells grown by gas-source molecular beam epitaxy

Journal of Crystal Growth ◽

10.1016/0022-0248(92)90384-u ◽

1992 ◽

Vol 120 (1-4) ◽

pp. 167-171 ◽

Author(s):

H.Q. Hou ◽

C.W. Tu

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Wells ◽

Molecular Beam ◽

Multiple Quantum Wells ◽

Multiple Quantum ◽

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Growth of GaAs1−xPx/GaAs and InAsxP1−x/InP strained quantum wells for optoelectronic devices by gas-source molecular beam epitaxy

Journal of Electronic Materials ◽

10.1007/bf02655828 ◽

1992 ◽

Vol 21 (2) ◽

pp. 137-141 ◽

Author(s):

H. Q. Hou ◽

C. W. Tu

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Wells ◽

Molecular Beam ◽

Optoelectronic Devices ◽

Strained Quantum Wells ◽

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Lateral composition modulation in InGaAsP strained layers and quantum wells grown on (100) InP by gas source molecular beam epitaxy

Journal of Crystal Growth ◽

10.1016/0022-0248(95)00364-9 ◽

1996 ◽

Vol 158 (1-2) ◽

pp. 6-14 ◽

Author(s):

R.R. LaPierre ◽

T. Okada ◽

B.J. Robinson ◽

D.A. Thompson ◽

G.C. Weatherly

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Wells ◽

Molecular Beam ◽

Strained Layers ◽

Composition Modulation ◽

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