High performance GaAsSb∕InP double heterojunction bipolar transistors grown by gas-source molecular beam epitaxy

2006 ◽  
Vol 24 (3) ◽  
pp. 1564 ◽  
Author(s):  
Bing-Ruey Wu ◽  
Benjamin F. Chu-Kung ◽  
Milton Feng ◽  
K. Y. Cheng
Keyword(s):  
Molecular Beam Epitaxy ◽  
Heterojunction Bipolar Transistors ◽  
High Performance ◽  
Molecular Beam ◽  
Bipolar Transistors ◽  
Gas Source ◽  
Double Heterojunction

InGaP/GaAs Based Single and Double Heterojunction Bipolar Transistors Grown by MOMBE

1992 ◽  
Vol 282 ◽  
Author(s):  
F. Ren ◽  
C. R. Abernathy ◽  
S. J. Pearton ◽  
P. W. Wisk ◽  
R. Esagui
Keyword(s):  
Molecular Beam Epitaxy ◽  
Heterojunction Bipolar Transistors ◽  
Molecular Beam ◽  
Bipolar Transistors ◽  
Carbon Doped ◽  
Gas Source ◽  
High Injection ◽  
Heterojunction Devices ◽  
Double Heterojunction ◽  
Metal Organic

Carbon-doped base InGaP/GaAs single and double heterojunction bipolar transistors (HBTs) grown by gas-source Metal Organic Molecular Beam Epitaxy (MOMBE) are reported. Large are devices (emitter diameter 70 μm) exhibited gain of 25 for high injection levels at a base doping of 5 × 1019 cm−3. Ideality factors (<1.1)were obtained for both emitter-base and base-collector junctions in both single (SHBT) and double PHBT) heterojunction devices. Vceo's of 12 V and 19 V for SHBTs and DHBTs respectively were measured.

Gas-Source Molecular Beam Epitaxy of Electronic Devices

1996 ◽  
Vol 421 ◽  
Author(s):  
E.A. Beam ◽  
B. Brar ◽  
T.P.E. Broekaert ◽  
H.F. Chau ◽  
W. Liu ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Heterojunction Bipolar Transistors ◽  
High Speed ◽  
Molecular Beam ◽  
Electronic Device ◽  
Field Effect Transistors ◽  
Tunneling Diodes ◽  
Gas Source ◽  
Device Structures ◽  
Double Heterojunction

AbstractGas-source molecular beam epitaxy (GSMBE) has been developed into a useful tool for the growth of both optical and electronic device structures. In this paper, we report on the use of tertiarybutylarsine (TBA) and tertiarybutylphosphine (TBP) in GSMBE for the growth of electronic device structures with state-of-the-art performance. Device structures based on both the In0.48Ga0.52P/GaAs and In0.53Ga 0.47As/InP lattice matched materials systems are described. The GSMBE system is based on the use of elemental Group-rn sources and employs thermal crackers for precracking TBA and TBP. Dopant sources include both elemental (Sn and Be) and vapor (CBr4 and SiBr4) sources. Device structures fabricated in the In0.48Ga0.52P/GaAs materials system include single- and double- heterojunction bipolar transistors (SHBTs and DHBTs). Device structures fabricated in the In0.53Ga0.47As/InP materials system include SHBTs, DHBTs, heterojunction field effect transistors (HFETs), and both planar and lateral resonant tunneling diodes (RTDs.) Vertically integrated HFET and multi-RTD heterostructures for high speed logic/memory are also described.

Metamorphic InP/InGaAs double-heterojunction bipolar transistors on GaAs grown by molecular-beam epitaxy

2000 ◽  
Vol 77 (6) ◽  
pp. 869-871 ◽  
Author(s):  
H. Q. Zheng ◽  
K. Radhakrishnan ◽  
H. Wang ◽  
K. H. Yuan ◽  
S. F. Yoon ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Heterojunction Bipolar Transistors ◽  
Molecular Beam ◽  
Bipolar Transistors ◽  
Double Heterojunction
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