Fully Strained Heavily Carbon-Doped GaAs Grown by Gas-Source Molecular Beam Epitaxy Using Carbontetrabromide and Its Application to InGaP/GaAs Heterojunction Bipolar Transistors
1997 ◽
Vol 36
(Part 1, No. 3B)
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pp. 1866-1868
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1993 ◽
Vol 32
(Part 2, No. 3A)
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pp. L309-L311
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2007 ◽
Vol 301-302
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pp. 212-216
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Keyword(s):
1996 ◽
2006 ◽
Vol 24
(3)
◽
pp. 1564
◽
1995 ◽
Vol 150
◽
pp. 1281-1286
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2004 ◽
Vol 22
(5)
◽
pp. 2499
1995 ◽
Vol 38
(9)
◽
pp. 1675-1678
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2000 ◽
Vol 17
(12)
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pp. 915-917
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