Oxygen partitioning analysis during Czochralski silicon crystal growth via a dopant marker and a simple transfer function modeling technique I. Rotation rate transients

1991 ◽  
Vol 109 (1-4) ◽  
pp. 142-148 ◽  
Author(s):  
C.T. Yen ◽  
W.A. Tiller
Keyword(s):  
Crystal Growth ◽  
Transfer Function ◽  
Rotation Rate ◽  
Silicon Crystal ◽  
Modeling Technique ◽  
Czochralski Silicon

Measurement of temperature gradient in Czochralski silicon crystal growth

2001 ◽  
Vol 229 (1-4) ◽  
pp. 6-10 ◽  
Author(s):  
Xinming Huang ◽  
Toshinori Taishi ◽  
Tiefeng Wang ◽  
Keigo Hoshikawa
Keyword(s):  
Crystal Growth ◽  
Temperature Gradient ◽  
Silicon Crystal ◽  
Czochralski Silicon

Investigation of nitrogen behaviors during Czochralski silicon crystal growth

2011 ◽  
Vol 318 (1) ◽  
pp. 178-182 ◽  
Author(s):  
Xuegong Yu ◽  
Deren Yang ◽  
Keigo Hoshikawa
Keyword(s):  
Crystal Growth ◽  
Silicon Crystal ◽  
Czochralski Silicon
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