Oxygen partitioning analysis during Czochralski silicon crystal growth via a dopant marker and a simple transfer function modeling technique II. Growth velocity and applied magnetic field transients

1992 ◽  
Vol 118 (1-2) ◽  
pp. 85-92 ◽  
Author(s):  
C.T. Yen ◽  
W.A. Tiller
Keyword(s):  
Magnetic Field ◽  
Crystal Growth ◽  
Transfer Function ◽  
Applied Magnetic Field ◽  
Growth Velocity ◽  
Silicon Crystal ◽  
Modeling Technique ◽  
Czochralski Silicon

The Effect of an External Magnetic Field on the Impurity Distribution in an RF-FZ Silicon Crystal During the Growth Process

2000 ◽  
Author(s):  
Tetsuo Munakata ◽  
Satoshi Someya ◽  
Ichiro Tanasawa
Keyword(s):  
Magnetic Field ◽  
Crystal Growth ◽  
External Magnetic Field ◽  
Applied Magnetic Field ◽  
Impurity Concentration ◽  
Growth Process ◽  
Silicon Crystal ◽  
Impurity Distribution ◽  
Rf Heating ◽  
Impurity Segregation

Abstract The impurity concentration distribution in a silicon crystal during the floating zone (FZ) growth process under radio-frequency (RF) heating and the effect of an externally applied magnetic field on the impurity distribution in the crystal have been investigated numerically. The main purpose of the study is to clarify the characteristics of the impurity distribution in the silicon crystal under the RF-FZ crystal growth process, and the effect of an externally applied magnetic field on such an impurity distribution. The numerically obtained characteristics on impurity distribution in the crystal are as follows. In the case of excluding the external magnetic field, impurity concentration in the crystal varies due to the fluctuation of the melt flow. If we apply an external magnetic field, such impurity variation in the crystal disappears due to the stabilizing effect of the external magnetic field. Further, the crystal growth rate is decreased, the impurity concentration in the crystal is also decreased. The impurity segregation coefficient does not affect the impurity distribution in the crystal.

Measurement of temperature gradient in Czochralski silicon crystal growth

2001 ◽  
Vol 229 (1-4) ◽  
pp. 6-10 ◽  
Author(s):  
Xinming Huang ◽  
Toshinori Taishi ◽  
Tiefeng Wang ◽  
Keigo Hoshikawa
Keyword(s):  
Crystal Growth ◽  
Temperature Gradient ◽  
Silicon Crystal ◽  
Czochralski Silicon
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