RHEED studies of initial stage of Ge film growth on (311)Si by gas source molecular beam epitaxy

1993 ◽  
Vol 128 (1-4) ◽  
pp. 319-326 ◽  
Author(s):  
Y. Yasuda ◽  
K. Itoh ◽  
N. Ohshima ◽  
Y. Koide ◽  
S. Zaima
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Film Growth ◽  
Gas Source ◽  
Initial Stage

Effects of high B-doping on Si(001) dangling bond densities, H desorption and film growth kinetics during gas-source molecular beam epitaxy

1997 ◽  
Vol 392 (1-3) ◽  
pp. L63-L68 ◽  
Author(s):  
G. Glass ◽  
H. Kim ◽  
M.R. Sardela ◽  
Q. Lu ◽  
J.R.A. Carlsson ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Growth Kinetics ◽  
Molecular Beam ◽  
Film Growth ◽  
Dangling Bond ◽  
Gas Source ◽  
B Doping

Si(001):B gas-source molecular-beam epitaxy: Boron surface segregation and its effect on film growth kinetics

1997 ◽  
Vol 82 (5) ◽  
pp. 2288-2297 ◽  
Author(s):  
H. Kim ◽  
G. Glass ◽  
T. Spila ◽  
N. Taylor ◽  
S. Y. Park ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Growth Kinetics ◽  
Molecular Beam ◽  
Surface Segregation ◽  
Film Growth ◽  
Gas Source

Arsenic incorporation during Si(001):As gas-source molecular-beam epitaxy from Si2H6 and AsH3: Effects on film-growth kinetics

2000 ◽  
Vol 88 (12) ◽  
pp. 7067-7078 ◽  
Author(s):  
H. Kim ◽  
G. Glass ◽  
J. A. N. T. Soares ◽  
P. Desjardins ◽  
J. E. Greene
Keyword(s):  
Molecular Beam Epitaxy ◽  
Growth Kinetics ◽  
Molecular Beam ◽  
Film Growth ◽  
Gas Source ◽  
Arsenic Incorporation

Initial Stage of Growth of Ge on (100)Si by Gas Source Molecular Beam Epitaxy Using GeH4

1989 ◽  
Vol 28 (Part 2, No. 4) ◽  
pp. L690-L693 ◽  
Author(s):  
Yasuo Koide ◽  
Shigeaki Zaima ◽  
Naoki Ohshima ◽  
Yukio Yasuda
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Gas Source ◽  
Initial Stage
Sign in / Sign up

Export Citation Format

Share Document