The growth mechanism of 〈100〉 oriented AlN thin films by low-frequency plasma-enhanced metalorganic chemical vapour deposition process

1993 ◽  
Vol 129 (3-4) ◽  
pp. 610-620 ◽  
Author(s):  
G.Y. Meng ◽  
N. Azéma ◽  
B. Cros ◽  
J. Durand ◽  
L. Cot
Keyword(s):  
Thin Films ◽  
Chemical Vapour Deposition ◽  
Growth Mechanism ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Low Frequency ◽  
Deposition Process ◽  
Frequency Plasma ◽  
Metalorganic Chemical Vapour Deposition ◽  
Metalorganic Chemical

Ferromagnetic Mn-Mn Interactions in Low Doped Zn1-xMnxO Thin Films

2006 ◽  
Vol 957 ◽  
Author(s):  
Aroussi BenMahmoud ◽  
H.Jurgen von Bardeleben ◽  
Alain Mauger ◽  
Jean Louis Cantin ◽  
Ekaterina Chikoidze ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Resonance Spectroscopy ◽  
Magnetic Polaron ◽  
Metalorganic Chemical Vapour Deposition ◽  
Polaron Formation ◽  
Weak Ferromagnetic ◽  
Metalorganic Chemical

ABSTRACTWe have studied by electron paramagentic resonance spectroscopy the Mn2+ EPR spectra in low doped (x=0.03) Zn1-xMnxO films of n-type conductivity prepared by metalorganic chemical vapour deposition. Contrary to higher doped films with x=0.07, the x=0.03 film shows a weak ferromagnetic Mn-Mn interaction which we attribute to the presence of moderate deep donors leading to magnetic polaron formation.

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