Structural and electronic properties of GaAs : C and AlxGa1-xAs : C grown by solid-source molecular beam epitaxy

1993 ◽  
Vol 127 (1-4) ◽  
pp. 724-727 ◽  
Author(s):  
C. Giannini ◽  
O. Brandt ◽  
A. Fischer ◽  
K.H. Ploog ◽  
L. Tapfer
Keyword(s):  
Molecular Beam Epitaxy ◽  
Electronic Properties ◽  
Molecular Beam ◽  
Structural And Electronic Properties

Molecular beam epitaxy of thick InGaN(0001) films: Effects of substrate temperature on structural and electronic properties

2016 ◽  
Vol 437 ◽  
pp. 20-25 ◽  
Author(s):  
E. Papadomanolaki ◽  
C. Bazioti ◽  
S.A. Kazazis ◽  
M. Androulidaki ◽  
G.P. Dimitrakopulos ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Substrate Temperature ◽  
Electronic Properties ◽  
Molecular Beam ◽  
Structural And Electronic Properties

Structural and electronic properties of epitaxial GaN layer grown on sapphire (0001) using laser molecular beam epitaxy

2014 ◽  
Vol 1 (3) ◽  
pp. 035903 ◽  
Author(s):  
Sunil Singh Kushvaha ◽  
M Senthil Kumar ◽  
Monisha Maheshwari ◽  
Ajay Kumar Shukla ◽  
Prabir Pal ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Electronic Properties ◽  
Molecular Beam ◽  
Laser Molecular Beam Epitaxy ◽  
Structural And Electronic Properties

Anisotropic Structural and Electronic Properties of InGaAs/GaAs Heterojunctions

1994 ◽  
Vol 340 ◽  
Author(s):  
R.S. Goldman ◽  
K. Rammohan ◽  
A. Raisanen ◽  
M. Goorsky ◽  
L.J. Brillson ◽  
...  
Keyword(s):  
High Resolution ◽  
Dislocation Density ◽  
Electronic Properties ◽  
Molecular Beam ◽  
Strain Relaxation ◽  
Polarization Anisotropy ◽  
X Ray ◽  
Bulk Strain ◽  
Gaas Substrates ◽  
Structural And Electronic Properties

ABSTRACTWe have investigated the structural and electronic properties of partially strain-relaxed InxGal-xAs/GaAs heterojunctions, grown by molecular beam epitaxy (MBE) on both misoriented and nominally flat (001) GaAs substrates. Mobility measurements using Hall bars aligned along the [110] and [110] in-plane directions reveal an asymmetry in bulk InGaAs electron mobility. This asymmetry is correlated with an anisotropic bulk strain relaxation and interfacial misfit dislocation density, determined from high-resolution x-ray rocking curves (XRC), as well as a polarization anisotropy in cathodoluminescence (CL).

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