scholarly journals Growth kinetics and electronic properties of unintentionally doped semi-insulating GaN on SiC and high-resistivity GaN on sapphire grown by ammonia molecular-beam epitaxy

2010 ◽  
Vol 107 (10) ◽  
pp. 103701 ◽  
Author(s):  
H. Tang ◽  
Z. Q. Fang ◽  
S. Rolfe ◽  
J. A. Bardwell ◽  
S. Raymond
Keyword(s):  
Molecular Beam Epitaxy ◽  
Electronic Properties ◽  
Growth Kinetics ◽  
Molecular Beam ◽  
High Resistivity

Growth kinetics of N-face polarity GaN by plasma-assisted molecular-beam epitaxy

2004 ◽  
Vol 84 (18) ◽  
pp. 3684-3686 ◽  
Author(s):  
E. Monroy ◽  
E. Sarigiannidou ◽  
F. Fossard ◽  
N. Gogneau ◽  
E. Bellet-Amalric ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Growth Kinetics ◽  
Molecular Beam ◽  
Kinetics Of

Heterostructures of GaAs and AlAs on Silicon: X-Ray Analysis and Excimer Laser Annealing

1988 ◽  
Vol 116 ◽  
Author(s):  
A. Georgakilas ◽  
M. Fatemi ◽  
L. Fotiadis ◽  
A. Christou
Keyword(s):  
Molecular Beam Epitaxy ◽  
Dislocation Density ◽  
Excimer Laser ◽  
Molecular Beam ◽  
Laser Annealing ◽  
High Resistivity ◽  
Silicon Substrates ◽  
Excimer Laser Annealing ◽  
X Ray ◽  
High Resistivity Silicon

AbstractOne micron thick AlAs/GaAs structures have been deposited by molecular beam epitaxy onto high resistivity silicon substrates. Subsequent to deposition, it is shown that Excimer laser annealing up to 120mJ/cm2 at 248nm improves the GaAs mobility to approximately 2000cm2 /v-s. Dislocation density, however, did not decrease up to 180mJ/cm2 showing that improvement in transport properties may not be accompanied by an associated decrease in dislocation density at the GaAs/Si interface.

High‐resistivity GaSb grown by molecular‐beam epitaxy

1992 ◽  
Vol 72 (4) ◽  
pp. 1316-1319 ◽  
Author(s):  
A. Y. Polyakov ◽  
M. Stam ◽  
A. G. Milnes ◽  
R. G. Wilson ◽  
Z. Q. Fang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
High Resistivity

GaN/AlN multiple quantum wells grown by molecular beam epitaxy: effect of growth kinetics on radiative recombination efficiency

2020 ◽  
Vol 709 ◽  
pp. 138216
Author(s):  
Chirantan Singha ◽  
Sayantani Sen ◽  
Alakananda Das ◽  
Anirban Saha ◽  
Pallabi Pramanik ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Growth Kinetics ◽  
Radiative Recombination ◽  
Molecular Beam ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Recombination Efficiency

Phosphorus incorporation during Si(001):P gas-source molecular beam epitaxy: Effects on growth kinetics and surface morphology

2008 ◽  
Vol 103 (12) ◽  
pp. 123530 ◽  
Author(s):  
B. Cho ◽  
J. Bareño ◽  
Y. L. Foo ◽  
S. Hong ◽  
T. Spila ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Surface Morphology ◽  
Growth Kinetics ◽  
Molecular Beam ◽  
Gas Source

Effects of high B-doping on Si(001) dangling bond densities, H desorption and film growth kinetics during gas-source molecular beam epitaxy

1997 ◽  
Vol 392 (1-3) ◽  
pp. L63-L68 ◽  
Author(s):  
G. Glass ◽  
H. Kim ◽  
M.R. Sardela ◽  
Q. Lu ◽  
J.R.A. Carlsson ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Growth Kinetics ◽  
Molecular Beam ◽  
Film Growth ◽  
Dangling Bond ◽  
Gas Source ◽  
B Doping
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