Epitaxial growth of cubic and hexagonal GaN by gas source molecular beam epitaxy using a microwave plasma nitrogen source

1994 ◽  
Vol 136 (1-4) ◽  
pp. 361-365 ◽  
Author(s):  
H. Okumura ◽  
S. Misawa ◽  
T. Okahisa ◽  
S. Yoshida
Keyword(s):  
Molecular Beam Epitaxy ◽  
Nitrogen Source ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Microwave Plasma ◽  
Gas Source

Lattice‐matched epitaxial growth of single crystalline 3C‐SiC on 6H‐SiC substrates by gas source molecular beam epitaxy

1992 ◽  
Vol 60 (7) ◽  
pp. 824-826 ◽  
Author(s):  
Tatsuo Yoshinobu ◽  
Hideaki Mitsui ◽  
Iwao Izumikawa ◽  
Takashi Fuyuki ◽  
Hiroyuki Matsunami
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Single Crystalline ◽  
Gas Source ◽  
Lattice Matched

Hetero-epitaxial growth of cubic GaN on GaAs by gas-source molecular beam epitaxy

1992 ◽  
Vol 267 (1-3) ◽  
pp. 50-53 ◽  
Author(s):  
S. Yoshida ◽  
H. Okumura ◽  
S. Misawa ◽  
E. Sakuma
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Gas Source ◽  
Cubic Gan
Sign in / Sign up

Export Citation Format

Share Document