Defect Formation during Hetero-Epitaxial Growth of Aluminum Nitride Thin Films on 6H-Silicon Carbide by Gas-Source Molecular Beam Epitaxy

1996 ◽  
Vol 35 (Part 1, No. 3) ◽  
pp. 1641-1647 ◽  
Author(s):  
Satoru Tanaka ◽  
R. Scott Kern ◽  
James Bentley ◽  
Robert F. Davis
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Molecular Beam Epitaxy ◽  
Aluminum Nitride ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Defect Formation ◽  
Gas Source

Growth of highly (0001)-oriented aluminum nitride thin films with smooth surfaces on silicon carbide by gas-source molecular beam epitaxy

Vacuum ◽  
1998 ◽  
Vol 49 (3) ◽  
pp. 189-191 ◽  
Author(s):  
K Järrendahl ◽  
SA Smith ◽  
T Zheleva ◽  
RS Kern ◽  
RF Davis
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Molecular Beam Epitaxy ◽  
Aluminum Nitride ◽  
Molecular Beam ◽  
Smooth Surfaces ◽  
Gas Source

scholarly journals Effect of Aluminum Nitride Buffer Layer Deposited by Molecular Beam Epitaxy on the Growth of Aluminum Nitride Thin Films Deposited by DC Magnetron Sputtering Technique

2021 ◽  
Author(s):  
B. Riah ◽  
Julien Camus ◽  
Abdelhak Ayad ◽  
Mohammad Rammal ◽  
Raouia Zernadji ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Aluminum Nitride ◽  
Magnetron Sputtering ◽  
Epitaxial Growth ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Dc Magnetron Sputtering ◽  
Aln Buffer

This paper reports the effect of silicon substrate orientation and aluminum nitride buffer layer deposited by molecular beam epitaxy on the growth of aluminum nitride thin films deposited by DC magnetron sputtering technique at low temperature. The structural analysis has revealed a strong (0001) fiber texture for both substrates Si (100) and (111) and a hetero-epitaxial growth on few nanometers AlN buffer layer grown by MBE on Si (111) substrate. SEM images and XRD characterization have shown an enhancement in AlN crystallinity thanks to AlN (MBE) buffer layer. Raman spectroscopy indicated that the AlN film was relaxed when it deposited on Si (111), in compression on Si (100) and under tension on AlN buffer layer grown by MBE/Si (111) substrates, respectively. The interface between Si (111) and AlN grown by MBE is abrupt and well defined; contrary to the interface between AlN deposited using PVD and AlN grown by MBE. Nevertheless, AlN hetero-epitaxial growth was obtained at low temperature (<250°C).

Aluminum nitride-silicon carbide solid solutions grown by plasma-assisted, gas-source molecular beam epitaxy

1998 ◽  
Vol 13 (7) ◽  
pp. 1816-1822 ◽  
Author(s):  
R. S. Kern ◽  
L. B. Rowland ◽  
S. Tanaka ◽  
R. F. Davis
Keyword(s):  
Crystal Structure ◽  
Electron Microscopy ◽  
Silicon Carbide ◽  
Molecular Beam Epitaxy ◽  
Aluminum Nitride ◽  
Solid Solutions ◽  
Molecular Beam ◽  
High Energy ◽  
Gas Source ◽  
Electron Spectrometry

Solid solutions of aluminum nitride (AlN) and silicon carbide (SiC) have been grown at 900–1300 °C on vicinal α (6H)-SiC(0001) substrates by plasma-assisted, gas-source molecular beam epitaxy. Under specific processing conditions, films of (AlN)x(SiC) 1−x with 0.2 ≤ x ≤ 0.8, as determined by Auger electron spectrometry (AES), were deposited. Reflection high-energy electron diffraction (RHEED) was used to determine the crystalline quality, surface character, and epilayer polytype. Analysis of the resulting surfaces was also performed by scanning electron microscopy (SEM). High-resolution transmission electron microscopy (HRTEM) revealed that monocrystalline films with x ≥ 0.25 had the wurtzite (2H) crystal structure; however, films with x < 0.25 had the zincblende (3C) crystal structure.

Aluminum nitride/silicon carbide multilayer heterostructure produced by plasma‐assisted, gas‐source molecular beam epitaxy

1993 ◽  
Vol 62 (25) ◽  
pp. 3333-3335 ◽  
Author(s):  
L. B. Rowland ◽  
R. S. Kern ◽  
S. Tanaka ◽  
Robert F. Davis
Keyword(s):  
Silicon Carbide ◽  
Molecular Beam Epitaxy ◽  
Aluminum Nitride ◽  
Molecular Beam ◽  
Gas Source

Piezoelectric Coefficients of Aluminum Nitride and Gallium Nitride

1999 ◽  
Vol 572 ◽  
Author(s):  
C. M. Lueng ◽  
H. L. W. Chan ◽  
W. K. Fong ◽  
C. Surya ◽  
C. L. Choy
Keyword(s):  
Thin Films ◽  
Gallium Nitride ◽  
High Temperature ◽  
Molecular Beam Epitaxy ◽  
Aluminum Nitride ◽  
Composite Film ◽  
High Frequency ◽  
Molecular Beam ◽  
Silicon Substrates ◽  
Heterodyne Interferometer

ABSTRACTAluminum nitride (AlN) and gallium nitride (GaN) thin films have potential uses in high temperature, high frequency (e.g. microwave) acoustic devices. In this work, the piezoelectric coefficients of wurtzite AlN and GaN/AlN composite film grown on silicon substrates by molecular beam epitaxy were measured by a Mach-Zehnder type heterodyne interferometer. The effects of the substrate on the measured coefficients are discussed.

Epitaxial Growth of Bi-Sr-Ca-Cu-O Thin Films by Molecular Beam Epitaxy Technique with Shutter Control

1989 ◽  
Vol 28 (Part 2, No. 10) ◽  
pp. L1809-L1811 ◽  
Author(s):  
Yoshimi Nakayama ◽  
Ichiro Tsukada ◽  
Atsutaka Maeda ◽  
Kunimitsu Uchinokura
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Molecular Beam

Epitaxial growth of (110) DyFe2, TbFe2 and Dy0.7Tb0.3Fe2 thin films by molecular beam epitaxy

1996 ◽  
Vol 165 (1-2) ◽  
pp. 175-178 ◽  
Author(s):  
V. Oderno ◽  
C. Dufour ◽  
K. Dumesnil ◽  
Ph. Mangin ◽  
G. Marchal
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Molecular Beam
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